Datasheet TCKE6 (Toshiba) - 6
| 制造商 | Toshiba |
| 描述 | 40 V, 2.5 A eFuse IC with Adjustable Overcurrent Protection in TSOP6F package |
| 页数 / 页 | 26 / 6 — 8. Electrical Characteristics. 8.1. DC Characteristics. Table 8.1.1 DC … |
| 文件格式/大小 | PDF / 1.4 Mb |
| 文件语言 | 英语 |
8. Electrical Characteristics. 8.1. DC Characteristics. Table 8.1.1 DC Characteristics. Ta= -40 to 125°C. Ta= 25°C. (Note5)
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TCKE6 Series
8. Electrical Characteristics 8.1. DC Characteristics Table 8.1.1 DC Characteristics
(Unless otherwise specified, Ta = 25°C, VIN = 24 V)
Ta= -40 to 125°C Ta= 25°C (Note5) Characteristics Symbol Test Condition Unit Min Typ. Max Min Max Basic operation
VIN under voltage lockout (UVLO) threshold, rising V IN_UVLO ― ― 4.0 ― 3.6 4.4 V VIN under voltage lockout (UVLO) hysteresis V IN_UVhys ― ― 0.13 ― ― ― V VIN over voltage lockout (OVLO) threshold, rising V IN_OVLO ― ― 32.0 ― 30.0 34.0 V VIN over voltage lockout (OVLO) hysteresis V IN_OVhys ― ― 0.9 ― ― ― V EN threshold voltage, rising VENR TCKE603 Only ― 0.83 ― 0.45 1.10 V EN threshold voltage, TCKE603 Only falling V ― 0.78 ― 0.4 1.05 V ENF EN pull down resistance REN TCKE603 Only ― 400 ― 220 800 kΩ I On resistance (Note6) OUT = 1.0 A RON ― 52 ― ― 90 mΩ RILIM = 11 kΩ I Quiescent current OUT = 0 A I TCKE603: V ― 1000 ― ― 1200 μA (ON state) Q EN = 3 V, RILIM = 11 kΩ Quiescent current I TCKE603 Only ― 5.2 ― ― 7.5 μA (OFF status) Q(OFF) VEN = 0V Discharge resistance RDIS VOUT = 24 V ― 2.3 ― 1.1 4.6 kΩ
FLAG
FLAG pin resistance TCKE601 Only RFLAG L Level ― 11 ― ― ― Ω FLAG leak current TCKE601 Only IFLAG V ― ― ― ― 1 μA FLAG=5.5 V
Overcurrent protection
RILIM = 11 kΩ, ― 2.40 ― 1.84 2.98 VIN - VOUT = 2 V RILIM = 23.7 kΩ, ― 0.98 ― 0.65 1.36 Output limit current VIN - VOUT = 2 V (Note6,7) I LIM RILIM = 53.6 kΩ, ― 0.35 ― 0.18 0.57 VIN - VOUT = 2 V A RILIM =OPEN, ― 0.06 ― ― ― VIN - VOUT = 2 V RILIM = 11 kΩ, ― 2.70 ― 2.06 3.26 Output detection current RILIM = 23.7 kΩ, ― 1.28 ― 0.90 1.72 (Note6,7) I LIMP RILIM = 53.6 kΩ, ― 0.58 ― 0.32 0.96 RILIM = OPEN ― 0.19 ― ― ― I Fast trip comparator level LIM× IFASTTRIP RILIM = 11 kΩ ― ― ― ― A 1.9 © 2 025 6 2025-10-28 Toshiba Electronic Devices & Storage Corporation Rev. 4.0
8. Electrical Characteristics 8.1. DC Characteristics Table 8.1.1 DC Characteristics
(Unless otherwise specified, Ta = 25°C, VIN = 24 V)
Ta= -40 to 125°C Ta= 25°C (Note5) Characteristics Symbol Test Condition Unit Min Typ. Max Min Max Basic operation
VIN under voltage lockout (UVLO) threshold, rising V IN_UVLO ― ― 4.0 ― 3.6 4.4 V VIN under voltage lockout (UVLO) hysteresis V IN_UVhys ― ― 0.13 ― ― ― V VIN over voltage lockout (OVLO) threshold, rising V IN_OVLO ― ― 32.0 ― 30.0 34.0 V VIN over voltage lockout (OVLO) hysteresis V IN_OVhys ― ― 0.9 ― ― ― V EN threshold voltage, rising VENR TCKE603 Only ― 0.83 ― 0.45 1.10 V EN threshold voltage, TCKE603 Only falling V ― 0.78 ― 0.4 1.05 V ENF EN pull down resistance REN TCKE603 Only ― 400 ― 220 800 kΩ I On resistance (Note6) OUT = 1.0 A RON ― 52 ― ― 90 mΩ RILIM = 11 kΩ I Quiescent current OUT = 0 A I TCKE603: V ― 1000 ― ― 1200 μA (ON state) Q EN = 3 V, RILIM = 11 kΩ Quiescent current I TCKE603 Only ― 5.2 ― ― 7.5 μA (OFF status) Q(OFF) VEN = 0V Discharge resistance RDIS VOUT = 24 V ― 2.3 ― 1.1 4.6 kΩ
FLAG
FLAG pin resistance TCKE601 Only RFLAG L Level ― 11 ― ― ― Ω FLAG leak current TCKE601 Only IFLAG V ― ― ― ― 1 μA FLAG=5.5 V
Overcurrent protection
RILIM = 11 kΩ, ― 2.40 ― 1.84 2.98 VIN - VOUT = 2 V RILIM = 23.7 kΩ, ― 0.98 ― 0.65 1.36 Output limit current VIN - VOUT = 2 V (Note6,7) I LIM RILIM = 53.6 kΩ, ― 0.35 ― 0.18 0.57 VIN - VOUT = 2 V A RILIM =OPEN, ― 0.06 ― ― ― VIN - VOUT = 2 V RILIM = 11 kΩ, ― 2.70 ― 2.06 3.26 Output detection current RILIM = 23.7 kΩ, ― 1.28 ― 0.90 1.72 (Note6,7) I LIMP RILIM = 53.6 kΩ, ― 0.58 ― 0.32 0.96 RILIM = OPEN ― 0.19 ― ― ― I Fast trip comparator level LIM× IFASTTRIP RILIM = 11 kΩ ― ― ― ― A 1.9 © 2 025 6 2025-10-28 Toshiba Electronic Devices & Storage Corporation Rev. 4.0