Datasheet ES1JV (Rectron Semiconductor) - 2

RATING AND CHARACTERISTICS CURVES ( ES1AV THRU ES1JV )
trr +0.5A 50 10 NONINDUCTIVE NONINDUCTIVE ( - ) D.U.T 0 ( + ) 25 Vdc PULSE GENERATOR (approx) (NOTE 2) -0.25A ( - ) 1 ( + ) NON- OSCILLOSCOPE INDUCTIVE (NOTE 1) NOTES: 1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. -1.0A 2. Rise Time = 10ns max. Source Impedance = 1cm 50 ohms. SET TIME BASE FOR 14/1 ns/cm FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC ) A 1.25 u ( 10000 , A T ( T , N A= 1 5 0OC T E 1.00 N R E R R U 1000 R C U E C 0.75 S D R R E A V 10 E W 0.50 R R O) S F U T E O A = 25 OC G Single Phase 1.0 A 0.25 N R Half Wave 60Hz A E Resistive or TE V N A Inductive Load A T 0 S 0.1 N 0 25 50 75 100 125 150 175 I 0 20 40 60 80 100 120 140 AMBIENT TEMPERATURE, (OC) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG.2 TYPICAL FORWARD CURRENT FIG.3 MAXIMUM REVERSE DERATING CURVE CHARACTERISTICS