Datasheet IRF4435TR-VB (VBsemi) - 3
| 制造商 | VBsemi |
| 描述 | High-performance P-channel MOSFET in SOP8 package |
| 页数 / 页 | 9 / 3 — IRF4435TR-VB. www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless … |
| 文件格式/大小 | PDF / 197 Kb |
| 文件语言 | 英语 |
IRF4435TR-VB. www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted. 30 4.0. VGS = 10 V thru 4 V. TC = -55 °C. 3.2
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IRF4435TR-VB
www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 4.0
VGS = 10 V thru 4 V
TC = -55 °C
3.2
ID -Drain Current (A) ID -Drain Current (A) 25 20 15 10 2.4
TC = 25 °C
1.6 VGS = 3 V TC = 125 °C
0.8 5
VGS = 2V
0
0 1 2 3 4 0.0
0.0 5 0.5 VDS -Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS -Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 1800 0.035 1500 Ciss VGS = 4.5 V 0.030
0.025 C -Capacitance (pF) R DS(on) -On-Resistance (Ω) 1.5 VGS = 10 V 0.020 1200 900 600 0.015 300 0.010 0 Coss
Crss 0 5 10 20 15 25 0 30 6 12 24 ID -Drain Current (A) VDS -Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.6
VGS = -10 V, ID = -5.6 A ID = 7 A
8 1.4
R DS(on) -On-Resistance
(Normalized) VGS -Gate-to-Source Voltage (V) 18 VDS = 15 V
6
VDS = 24 V
4 2 1.2
VGS = -4.5 V, ID = -7 A
1.0 0.8 0
0 4 8 12 16 Qg -Total Gate Charge (nC) Gate Charge 20 24 0.6
-50 -25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788
3
www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 4.0
VGS = 10 V thru 4 V
TC = -55 °C
3.2
ID -Drain Current (A) ID -Drain Current (A) 25 20 15 10 2.4
TC = 25 °C
1.6 VGS = 3 V TC = 125 °C
0.8 5
VGS = 2V
0
0 1 2 3 4 0.0
0.0 5 0.5 VDS -Drain-to-Source Voltage (V) 1.0 2.0 2.5 3.0 VGS -Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.040 1800 0.035 1500 Ciss VGS = 4.5 V 0.030
0.025 C -Capacitance (pF) R DS(on) -On-Resistance (Ω) 1.5 VGS = 10 V 0.020 1200 900 600 0.015 300 0.010 0 Coss
Crss 0 5 10 20 15 25 0 30 6 12 24 ID -Drain Current (A) VDS -Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.6
VGS = -10 V, ID = -5.6 A ID = 7 A
8 1.4
R DS(on) -On-Resistance
(Normalized) VGS -Gate-to-Source Voltage (V) 18 VDS = 15 V
6
VDS = 24 V
4 2 1.2
VGS = -4.5 V, ID = -7 A
1.0 0.8 0
0 4 8 12 16 Qg -Total Gate Charge (nC) Gate Charge 20 24 0.6
-50 -25 0 25 50 75 100 125 150 TJ -Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788
3