Datasheet BUT56, BUT56A (Inchange Semiconductor)
| 制造商 | Inchange Semiconductor |
| 描述 | Silicon NPN Power Transistors in TO-220 package |
| 页数 / 页 | 3 / 1 — Inchange Semiconductor. Product Specification. Silicon NPN Power … |
| 文件格式/大小 | PDF / 146 Kb |
| 文件语言 | 英语 |
Inchange Semiconductor. Product Specification. Silicon NPN Power Transistors BUT56 BUT56A. DESCRIPTION. APPLICATIONS. PINNING
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION
・ ・With TO-220C package ・High voltage;high speed ・High power dissipation
APPLICATIONS
・Switching mode power supply
PINNING PIN DESCRIPTION
1 Base Collector;connected to 2 mounting base 3 Emitter
Absolut maximum ratings (Ta=25
℃
) SYMBOL PARAMETER CONDITIONS VALUE UNIT
BUT56 800 VCBO Collector-base voltage Open emitter V BUT56A 1000 BUT56 400 VCEO Collector-emitter voltage Open base V BUT56A 450 VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 10 A IBM Base current-peak 4 A Ptot Total power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal resistance junction to mounting case 1.25 K/W
・ ・With TO-220C package ・High voltage;high speed ・High power dissipation
APPLICATIONS
・Switching mode power supply
PINNING PIN DESCRIPTION
1 Base Collector;connected to 2 mounting base 3 Emitter
Absolut maximum ratings (Ta=25
℃
) SYMBOL PARAMETER CONDITIONS VALUE UNIT
BUT56 800 VCBO Collector-base voltage Open emitter V BUT56A 1000 BUT56 400 VCEO Collector-emitter voltage Open base V BUT56A 450 VEBO Emitter-base voltage Open collector 6 V IC Collector current 8 A ICM Collector current-peak 10 A IBM Base current-peak 4 A Ptot Total power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal resistance junction to mounting case 1.25 K/W