Datasheet DXTN80030DFGQ (Diodes) - 5
| 制造商 | Diodes |
| 描述 | NPN, 30V, 10A, PowerDI3333-8 |
| 页数 / 页 | 8 / 5 — DXTN80030DFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 … |
| 文件格式/大小 | PDF / 666 Kb |
| 文件语言 | 英语 |
DXTN80030DFGQ. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
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DXTN80030DFGQ Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 700 1 V =2V I /I =20 150°C C B CE 600 85°C 500 0.1 150°C 25°C ) ni 400 V a ( G ) t sa 85°C 300 ( h
FE
-55°C 25°C V CE0.01 200 -55°C 100 0 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 I /I =100 C B 0.1 ) 25°C V I /I =50 ) 0.6 C B ( ) V t ( sa ( )no(E 0.4 85°C V CE0.01 I /I =10 C B V B 150°C 0.2 I /I =20 C B 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( Cibo 0.8 ) ce V 25°C ( )t an 0.6 100 t sa(E aci V B 0.4 150°C ap Cobo 85°C C 0.2 0.0 10 0.001 0.01 0.1 1 10 0 5 10 15 20 25 30 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80030DFGQ 5 of 8 August 2025 Document number: DS46957 Rev. 2 - 2
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© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 700 1 V =2V I /I =20 150°C C B CE 600 85°C 500 0.1 150°C 25°C ) ni 400 V a ( G ) t sa 85°C 300 ( h
FE
-55°C 25°C V CE0.01 200 -55°C 100 0 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 I /I =100 C B 0.1 ) 25°C V I /I =50 ) 0.6 C B ( ) V t ( sa ( )no(E 0.4 85°C V CE0.01 I /I =10 C B V B 150°C 0.2 I /I =20 C B 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( Cibo 0.8 ) ce V 25°C ( )t an 0.6 100 t sa(E aci V B 0.4 150°C ap Cobo 85°C C 0.2 0.0 10 0.001 0.01 0.1 1 10 0 5 10 15 20 25 30 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN80030DFGQ 5 of 8 August 2025 Document number: DS46957 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.