Datasheet DXTN78030DFG (Diodes) - 5
| 制造商 | Diodes |
| 描述 | NPN, 30V, 9A, PowerDI3333-8 |
| 页数 / 页 | 8 / 5 — DXTN78030DFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. … |
| 文件格式/大小 | PDF / 546 Kb |
| 文件语言 | 英语 |
DXTN78030DFG. Typical Electrical Characteristics. Fig. 7 h v I. Fig. 8 V. v I. CE(sat). Fig. 9 V. Fig. 10 V. BE(on). Fig. 11 V
该数据表的模型线
文件文字版本
DXTN78030DFG Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =20 V =2V C B 150°C CE 600 85°C 500 150°C 0.1 25°C ) ni 400 V a ( G )t 85°C sa(
FE
300 h -55°C CE 25°C V 0.01 200 -55°C 100 0 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 I /I =100 25°C 0.1 C B ) V I /I =50 5 ) 0.6 ( C B ) V t ( sa ) ( n o( 85°C CE E 0.4 V B I /I =10 0.01 C B V 150°C 0.2 I /I =20 C B 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( 0.8 ) V 25°C ce ( )t an 0.6 100 t sa( E Cibo B aci V 150°C 0.4 ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 5 10 15 20 25 30 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN78030DFG 5 of 8 September 2025 Document number: DS46859 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.) 700 1 I /I =20 V =2V C B 150°C CE 600 85°C 500 150°C 0.1 25°C ) ni 400 V a ( G )t 85°C sa(
FE
300 h -55°C CE 25°C V 0.01 200 -55°C 100 0 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 7 h v I Fig. 8 V v I FE C CE(sat) C
1 1.0 Ta=25°C V =2V CE -55°C 0.8 I /I =100 25°C 0.1 C B ) V I /I =50 5 ) 0.6 ( C B ) V t ( sa ) ( n o( 85°C CE E 0.4 V B I /I =10 0.01 C B V 150°C 0.2 I /I =20 C B 0.001 0.0 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I Collector Current (A) I Collector Current (A) C C
Fig. 9 V v I Fig. 10 V v I CE(sat) C BE(on) C
1.2 I /I =20 C B f=1MHz 1.0 ) -55°C pF( 0.8 ) V 25°C ce ( )t an 0.6 100 t sa( E Cibo B aci V 150°C 0.4 ap 85°C C 0.2 Cobo 0.0 10 0.001 0.01 0.1 1 10 5 10 15 20 25 30 I Collector Current (A) V Reverse Voltage (V) C
R Fig. 11 V v I Fig. 12 Typical Junction Capacitance BE(sat) C
DXTN78030DFG 5 of 8 September 2025 Document number: DS46859 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.