Datasheet CBCP68, CBCP69 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | 20V, 1A, 2W Surface mount Transistor-Small Signal (<=1A) PNP High Current in SOT-223 package |
| 页数 / 页 | 6 / 1 — CBCP68 NPN. CBCP69 PNP. www.centra lsemi.com. SURFACE MOUNT SILICON. … |
| 文件格式/大小 | PDF / 404 Kb |
| 文件语言 | 英语 |
CBCP68 NPN. CBCP69 PNP. www.centra lsemi.com. SURFACE MOUNT SILICON. COMPLEMENTARY. DESCRIPTION:. SMALL SIGNAL TRANSISTORS
该数据表的模型线
文件文字版本
CBCP68 NPN CBCP69 PNP www.centra lsemi.com SURFACE MOUNT SILICON COMPLEMENTARY DESCRIPTION: SMALL SIGNAL TRANSISTORS
The CENTRAL SEMICONDUCTOR CBCP68 and CBCP69 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.
MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Collector-Emitter Voltage VCES 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Peak Collector Current ICM 2.0 A Continuous Base Current IB 100 mA Peak Base Current IBM 200 mA Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 62.5 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=25V 10 µA ICBO VCB=25V, TA=150°C 1.0 mA IEBO VEB=5.0V 10 µA BVCBO IC=10µA 25 V BVCEO IC=10mA 20 V BVEBO IE=1.0µA 5.0 V VCE(SAT) IC=1.0A, IB=100mA 0.5 V VBE(ON) VCE=10V, IC=5.0mA 0.6 V VBE(ON) VCE=1.0V, IC=1.0A 1.0 V hFE VCE=10V, IC=5.0mA 50 hFE VCE=1.0V, IC=500mA 85 375 hFE VCE=1.0V, IC=1.0A 60 fT VCE=5.0V, IC=10mA, f=20MHz 65 MHz Cob VCB=5.0V, IE=0, f=450kHz 25 pF R7 (30-April 2019)
The CENTRAL SEMICONDUCTOR CBCP68 and CBCP69 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability.
MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Collector-Emitter Voltage VCES 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 1.0 A Peak Collector Current ICM 2.0 A Continuous Base Current IB 100 mA Peak Base Current IBM 200 mA Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 62.5 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=25V 10 µA ICBO VCB=25V, TA=150°C 1.0 mA IEBO VEB=5.0V 10 µA BVCBO IC=10µA 25 V BVCEO IC=10mA 20 V BVEBO IE=1.0µA 5.0 V VCE(SAT) IC=1.0A, IB=100mA 0.5 V VBE(ON) VCE=10V, IC=5.0mA 0.6 V VBE(ON) VCE=1.0V, IC=1.0A 1.0 V hFE VCE=10V, IC=5.0mA 50 hFE VCE=1.0V, IC=500mA 85 375 hFE VCE=1.0V, IC=1.0A 60 fT VCE=5.0V, IC=10mA, f=20MHz 65 MHz Cob VCB=5.0V, IE=0, f=450kHz 25 pF R7 (30-April 2019)