Datasheet THAT 300 (THAT Corporation)

Low-Noise Matched Transistor Array ICs
THAT 300 Series
FEATURES APPLICATIONS
• 4 Matched NPN Transistors • Low Noise Front Ends º 300 typical hfe of 100 º 300A minimum hfe of 150 º 300B minimum hfe of 300 • 4 Matched PNP Transistors • Microphone Preamplifiers º 320 typical hfe of 75 • 2 Matched PNP and 2 Matched NPN Transistors • Log/Antilog Amplifiers º 340 PNP typical hfe of 75 º 340 NPN typical hfe of 100 • Low Voltage Noise • Current Sources º 0.75 nV/ √Hz (PNP) º 0.8 nV/ √Hz (NPN) • High Speed • Current Mirrors º fT = 350 MHz (NPN) º fT = 325 MHz (PNP) • 500 μV matching between devices • Multipliers • Dielectrically Isolated for low crosstalk and high DC isolation • 36V VCEO
Description
The THAT 300, 320 and 340 are large used in conventional arrays). As a result, they exhibit geometry, 4-transistor, monolithic NPN and/or PNP inter-device crosstalk and DC isolation similar to arrays. They exhibit both high speed and low noise, that of discrete transistors. The resulting low with excellent parameter matching between transis- collector-to-substrate capacitance produces a typical tors of the same gender. Typical base-spreading NPN f resistance is 25 T of 350 MHz (325 MHz for the PNPs). Ω for the PNP devices (30 Ω for the Substrate biasing is not required for normal opera- low-gain NPNs), so their resulting voltage noise is tion, though the substrate should be ac-grounded to under 1 nV/√Hz. This makes the 300 series ideally optimize speed and minimize crosstalk. suited for low-noise amplifier input stages, log ampli- fiers, and many other applications. The four-NPN An eight-transistor bare-die array with similar transistor array is available in versions selected for performance characteristics (the THAT 380G) is also hfe with minimums of 150 (300A) or 300 (300B). available from THAT Corporation. Please contact us Fabricated in a dielectrically isolated, comple- directly or through your local distributor for more information. Military-grade temperature range mentary bipolar process, each transistor is electri- packages are available from TT Semiconductor (see cally insulated from the others by a layer of www.ttsemiconductor.com for more information). insulating oxide (not the reverse-biased PN junctions
Part Number Configuration Package
300P14-U DIP14 4-Matched NPN Transistors, Beta = 60 min. 300S14-U SO14 300AS14-U 4-Matched NPN Transistors, Beta = 150 min. SO14 300BS14-U 4-Matched NPN Transistors, Beta = 300 min. SO14 320P14-U DIP14 4-Matched PNP Transistors 320S14-U SO14 340P14-U DIP14 2-Matched NPN Transistors and 340S14-U 2-Matched PNP Transistors SO14 Table 1. Ordering Information THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com Copyright © 2013, THAT Corporation. Document 600041 Rev 04 Document Outline Home Features & Applications Description Ordering Information Pin Assignments Specifications Absolute Maximum Ratings NPN Electrical Characteristics PNP Electrical Characteristics Packaging and Soldering Information Package Characteristics Revision History