Datasheet MDF11N65B (Magnachip) - 4

M DF 1 1 N65
C C = C + C (C = shorted) iss gs gd ds 10 oss
※ Note : I = 12.0A
2800 C = C + C
D
oss ds gd C = C rss gd
B
130V ] 2400
N
8 325V Ciss
-
e [V 520V
c
2000 tag
ha
ol 6 e [pF] 1600
nnel
e V c ur tanci 4 1200 -So
MOS
C ※ Notes ; rss ate 1. V = 0 V Capac 800 GS 2 , G 2. f = 1 MHz GS V 400
FET
0 0
6
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 1 10
5
Q , Total Gate Charge [nC] V , Drain-Source Voltage [V]
0
G DS
V Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
102
Operation in This Area is Limited by R DS(on)
D=0.5 10 s 100 101 100 s 0.2 1 ms se 10 ms 0.1 100 ms DC urrent [A] (t), C 100 J Respon 0.05 θZ al m 0.02 , Drain C her 10-1 I D T 0.01 ※ Notes : 10-1 Duty Factor, D=t /t 1 2 PEAK T = P * Z * R (t) + T J DM θ JC θ JC C
Single Pulse
single pulse R =2.52℃ /W Θ JC
T =Max rated J T =25℃ C
10-2 10-5 10-4 10-3 10-2 10-1 100 101 10-1 100 101 102 t , Rectangular Pulse Duration [sec] 1 V , Drain-Source Voltage [V] DS
Fig.9 Maximum Safe Operating Area Fig.10 Transient Thermal Response Curve
6000 14 13
single Pulse
12 5000
R = 2.52℃ /W thJC T = 25℃
11
C
10 ] 4000 [A 9
)
ent 8 r
(W
3000 7
r e
n Cur 6
w
ai
o P
5 2000 , Dr I D 4 3 1000 2 1 0 0 1E-5 1E-4 1E-3 0.01 0.1 1 10 25 50 75 100 125 150
Pulse Width (s)
T , Case Temperature [℃ ] C
Fig.11 Single Pulse Maximum Power Fig.12 Maximum Drain Current vs. Case Dissipation Temperature
Jan. 2021. Version 1.2 4 Magnachip Semiconductor Ltd.