Datasheet IRGPS60B120KDP (Infineon) - 7
| 制造商 | Infineon |
| 描述 | Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package |
| 页数 / 页 | 12 / 7 — Fig. 17. Fig. 18. Fig. 19. Fig. 20 |
| 文件格式/大小 | PDF / 142 Kb |
| 文件语言 | 英语 |
Fig. 17. Fig. 18. Fig. 19. Fig. 20
该数据表的模型线
文件文字版本
IRGPS60B120KDP 70 60 RG = 4.7Ω 60 50 50 40 ) 40 R ) A G =22 Ω A ( 30 R R I R 30 I R RG =47 Ω 20 20 RG =100 Ω 10 10 0 0 0 20 40 60 80 100 0 50 100 150 I R F (A) G (Ω)
Fig. 17
- Typical Diode IRR vs. IF
Fig. 18
- Typical Diode IRR vs. RG TJ = 125°C TJ = 125°C; IF = 60A 60 12 4.7 R Ω G = 4.7Ω 11 90A 50 10 22Ω 60A 47 Ω 9 40 R ) G =22 Ω 8 C ) µ A ( 7 30 R R R 100Ω I R RG =47 Ω Q 6 30A 20 5 RG =100 Ω 4 10 3 2 0 0 500 1000 1500 0 500 1000 1500 diF /dt (A/µs) diF /dt (A/µs)
Fig. 19
- Typical Diode I
Fig. 20
- Typical Diode Q RR vs. diF/dt RR V V CC= 600V; VGE= 15V; CC= 600V; VGE= 15V;TJ = 125°C ICE= 60A; TJ = 125°C www.irf.com 7
Fig. 17
- Typical Diode IRR vs. IF
Fig. 18
- Typical Diode IRR vs. RG TJ = 125°C TJ = 125°C; IF = 60A 60 12 4.7 R Ω G = 4.7Ω 11 90A 50 10 22Ω 60A 47 Ω 9 40 R ) G =22 Ω 8 C ) µ A ( 7 30 R R R 100Ω I R RG =47 Ω Q 6 30A 20 5 RG =100 Ω 4 10 3 2 0 0 500 1000 1500 0 500 1000 1500 diF /dt (A/µs) diF /dt (A/µs)
Fig. 19
- Typical Diode I
Fig. 20
- Typical Diode Q RR vs. diF/dt RR V V CC= 600V; VGE= 15V; CC= 600V; VGE= 15V;TJ = 125°C ICE= 60A; TJ = 125°C www.irf.com 7