Datasheet IRGPS60B120KDP (Infineon) - 2
| 制造商 | Infineon |
| 描述 | Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package |
| 页数 / 页 | 12 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| 文件格式/大小 | PDF / 142 Kb |
| 文件语言 | 英语 |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Ref.Fig. Parameter. Min. Typ. Max. Units. Conditions
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IRGPS60B120KDP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig. Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C) V 5, 6 CE(on) Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 IC = 50A VGE = 15V ––– 2.50 2.75 V I 7, 9 C = 60A ––– 2.79 3.1 I 10 C = 50A, TJ = 125°C ––– 3.04 3.5 IC = 60A, TJ = 125°C 11 VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, IC = 250µA 9,10 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -12 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 11 ,12 gfe Forward Transconductance ––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80µs ICES Zero Gate Voltage Collector Current ––– ––– 500 µA VGE = 0V, VCE = 1200V ––– 650 1350 VGE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage Drop ––– 1.82 2.10 IC = 50A ––– 1.93 2.20 V I 8 C = 60A ––– 1.96 2.20 IC = 50A, TJ = 125°C ––– 2.13 2.40 IC = 60A, TJ = 125°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig.
Qg Total Gate Charge (turn-on) ––– 340 510 IC = 60A 23 Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC VCC = 600V CT1 Qgc Gate - Collector Charge (turn-on) ––– 165 248 VGE = 15V Eon Turn-On Switching Loss ––– 3214 4870 µJ IC = 60A, VCC = 600V CT4 Eoff Turn-Off Switching Loss ––– 4783 5450 VGE = 15V,RG = 4.7Ω, L =200µH WF1 Etot Total Switching Loss ––– 8000 10320 Ls = 150nH TJ = 25°C WF2 Eon Turn-On Switching Loss ––– 5032 6890 TJ = 125°C 13,15 Eoff Turn-Off Switching Loss ––– 7457 8385 µJ Energy losses include "tail" and Etot Total Switching Loss ––– 12500 15275 diode reverse recovery. t 14, 16 d(on) Turn-On Delay Time ––– 72 94 IC = 15A, VCC = 600V t CT4 r Rise Time ––– 32 45 VGE = 15V, RG = 4.7Ω L =200µH t WF1 d(off) Turn-Off Delay Time ––– 366 400 ns Ls = 150nH, TJ = 125°C tf Fall Time ––– 45 58 WF2 Cies Input Capacitance ––– 4300 ––– VGE = 0V Coes Output Capacitance ––– 395 ––– pF VCC = 30V 22 Cres Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz TJ = 150°C, IC = 240A, Vp =1200V 4 RBSOA Reverse Bias Safe Operting Area FULL SQUARE VCC = 1000V, VGE = +15V to 0V CT2 RG = 4.7Ω TJ = 150°C, Vp =1200V CT3 SCSOA Short Circuit Safe Operting Area 10 ––– ––– µs VCC = 900V, VGE = +15V to 0V, WF4 RG = 4.7Ω Erec Reverse Recovery energy of the diode ––– 3346 ––– µJ TJ = 125°C 17,18,19 trr Diode Reverse Recovery time ––– 180 ––– ns VCC = 600V, IF = 60A, L =200µH 20, 21 Irr Diode Peak Reverse Recovery Current ––– 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH CT4,WF3 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ref.Fig. Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.40 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C) V 5, 6 CE(on) Collector-to-Emitter Saturation Voltage ––– 2.33 2.50 IC = 50A VGE = 15V ––– 2.50 2.75 V I 7, 9 C = 60A ––– 2.79 3.1 I 10 C = 50A, TJ = 125°C ––– 3.04 3.5 IC = 60A, TJ = 125°C 11 VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, IC = 250µA 9,10 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -12 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C) 11 ,12 gfe Forward Transconductance ––– 34.4 ––– S VCE = 50V, IC = 60A, PW=80µs ICES Zero Gate Voltage Collector Current ––– ––– 500 µA VGE = 0V, VCE = 1200V ––– 650 1350 VGE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage Drop ––– 1.82 2.10 IC = 50A ––– 1.93 2.20 V I 8 C = 60A ––– 1.96 2.20 IC = 50A, TJ = 125°C ––– 2.13 2.40 IC = 60A, TJ = 125°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig.
Qg Total Gate Charge (turn-on) ––– 340 510 IC = 60A 23 Qge Gate - Emitter Charge (turn-on) ––– 40 60 nC VCC = 600V CT1 Qgc Gate - Collector Charge (turn-on) ––– 165 248 VGE = 15V Eon Turn-On Switching Loss ––– 3214 4870 µJ IC = 60A, VCC = 600V CT4 Eoff Turn-Off Switching Loss ––– 4783 5450 VGE = 15V,RG = 4.7Ω, L =200µH WF1 Etot Total Switching Loss ––– 8000 10320 Ls = 150nH TJ = 25°C WF2 Eon Turn-On Switching Loss ––– 5032 6890 TJ = 125°C 13,15 Eoff Turn-Off Switching Loss ––– 7457 8385 µJ Energy losses include "tail" and Etot Total Switching Loss ––– 12500 15275 diode reverse recovery. t 14, 16 d(on) Turn-On Delay Time ––– 72 94 IC = 15A, VCC = 600V t CT4 r Rise Time ––– 32 45 VGE = 15V, RG = 4.7Ω L =200µH t WF1 d(off) Turn-Off Delay Time ––– 366 400 ns Ls = 150nH, TJ = 125°C tf Fall Time ––– 45 58 WF2 Cies Input Capacitance ––– 4300 ––– VGE = 0V Coes Output Capacitance ––– 395 ––– pF VCC = 30V 22 Cres Reverse Transfer Capacitance ––– 160 ––– f = 1.0MHz TJ = 150°C, IC = 240A, Vp =1200V 4 RBSOA Reverse Bias Safe Operting Area FULL SQUARE VCC = 1000V, VGE = +15V to 0V CT2 RG = 4.7Ω TJ = 150°C, Vp =1200V CT3 SCSOA Short Circuit Safe Operting Area 10 ––– ––– µs VCC = 900V, VGE = +15V to 0V, WF4 RG = 4.7Ω Erec Reverse Recovery energy of the diode ––– 3346 ––– µJ TJ = 125°C 17,18,19 trr Diode Reverse Recovery time ––– 180 ––– ns VCC = 600V, IF = 60A, L =200µH 20, 21 Irr Diode Peak Reverse Recovery Current ––– 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH CT4,WF3 2 www.irf.com