Datasheet SI7489DP (Vishay) - 5
| 制造商 | Vishay |
| 描述 | P-Channel 100-V (D-S) MOSFET |
| 页数 / 页 | 13 / 5 — Si7489DP. TYPICAL CHARACTERISTICS. Current Derating*. Power Derating. … |
| 文件格式/大小 | PDF / 309 Kb |
| 文件语言 | 英语 |
Si7489DP. TYPICAL CHARACTERISTICS. Current Derating*. Power Derating. Single Pulse Avalanche Capability
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Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 35 100 30 80 25 Package Limited 60 20 er (W) w o 15 P ain Current (A) 40 - Dr 10 I D 20 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C)
Current Derating* Power Derating
100 10 alanche Current (A) v eak A - P L · I I C T = A A BV - VDD 1 0.000001 0.00001 0.0001 0.001 0.01 TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73436 www.vishay.com S09-0271-Rev. C, 16-Feb-09 5
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 35 100 30 80 25 Package Limited 60 20 er (W) w o 15 P ain Current (A) 40 - Dr 10 I D 20 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C)
Current Derating* Power Derating
100 10 alanche Current (A) v eak A - P L · I I C T = A A BV - VDD 1 0.000001 0.00001 0.0001 0.001 0.01 TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73436 www.vishay.com S09-0271-Rev. C, 16-Feb-09 5