Datasheet FDMA430NZ (ON Semiconductor) - 3

FDMA430NZ TYPICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted) 40 1.8 VGS = 4.5 V 1.7 VGS = 2.5 V 1.6 30 V PULSE DURATION = 300 ms GS = 2.0 V 1.5 DUTY CYCLE = 2.0% MAX 2.5 V
−Resistance
1.4 V 3.0 V 20 GS = 3.0 V 1.3 V 3.5 V GS = 2.0 V 1.2
, Drain Current (A) Normalized I D
1.1 4.5 V 10 1.0 VGS = 1.5 V
Drain to Source On
0.9 0 0.8 0 1 2 3 4 5 10 15 20 25 30 35 40
VDS, Drain to Source Voltage (V) ID, Drain Current (A) Figure 1. On−Region Characteristics Figure 2. On−Resistance vs. Drain Current and Gate Voltage
1.6 0.08 ID = 5.0 A PULSE DURATION = 300 ms VGS = 4.5 V DUTY CYCLE = 2.0% MAX 1.4 0.07
)
I
W
D = 2.5 A 0.06
−Resistance
1.2 0.05 1.0
, Drain to Source
T
−Resistance (
J = 125°C
Normalized
0.04
On DS(on)R
0.8 0.03
Drain to Source On
TJ = 25°C 0.6 0.02 −80 −40 0 40 80 120 160 1 2 3 4 5
TJ, Junction Temperature (
5
C) VGS, Gate to Source Voltage (V) Figure 3. Normalized On−Resistance Figure 4. On−Resistance vs. Gate to Source vs. Junction Temperature Voltage
30 100 PULSE DURATION = 300 ms VGS = 0 V DUTY CYCLE = 2.0% MAX 25 10 VDS = 5 V T 20 1 J = 125°C T 15 0.1 J = 25°C TJ = 125°C
, Drain Current (A)
10 0.01
I D , Reverse Current (A)
TJ = 25°C
I S
TJ = −55°C 5 1E−3 TJ = −55°C 0 1E−4 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, Gate to Source Voltage (V) VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3