Datasheet PMV65UNEA (Nexperia) - 8
| 制造商 | Nexperia |
| 描述 | 20 V, N-channel Trench MOSFET |
| 页数 / 页 | 15 / 8 — Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. Fig. 10. Transfer … |
| 修订版 | 23202103 |
| 文件格式/大小 | PDF / 258 Kb |
| 文件语言 | 英语 |
Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. Fig. 10. Transfer characteristics: drain current as a
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Nexperia PMV65UNEA 20 V, N-channel Trench MOSFET
aaa-022690 12 aaa-022691 2 ID (A) a 1.5 6 1 Tj = 150 °C Tj = 25 °C 0.5 0 0 0 1 2 3 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values
aaa-022692 1.5 aaa-022693 103 VGS(th) (V) C (pF) Ciss 1 max typ 102 0.5 min Coss Crss 0 10 -60 0 60 120 180 10-2 10-1 1 10 102 Tj (°C) VDS (V) ID = 250 μA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances ambient temperature as a function of drain-source voltage; typical values
PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 8 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents
aaa-022690 12 aaa-022691 2 ID (A) a 1.5 6 1 Tj = 150 °C Tj = 25 °C 0.5 0 0 0 1 2 3 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values
aaa-022692 1.5 aaa-022693 103 VGS(th) (V) C (pF) Ciss 1 max typ 102 0.5 min Coss Crss 0 10 -60 0 60 120 180 10-2 10-1 1 10 102 Tj (°C) VDS (V) ID = 250 μA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances ambient temperature as a function of drain-source voltage; typical values
PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 8 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents