Datasheet PMV65UNEA (Nexperia) - 6
| 制造商 | Nexperia |
| 描述 | 20 V, N-channel Trench MOSFET |
| 页数 / 页 | 15 / 6 — Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. 10. Characteristics. … |
| 修订版 | 23202103 |
| 文件格式/大小 | PDF / 258 Kb |
| 文件语言 | 英语 |
Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. 10. Characteristics. Table 7. Characteristics. Symbol. Parameter. Conditions. Min
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Nexperia PMV65UNEA 20 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V breakdown voltage VGSth gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 1 V voltage IDSS drain leakage current VDS = 20 V; VGS = 0 V - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -5 µA RDSon drain-source on-state VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C - 63 73 mΩ resistance VGS = 4.5 V; ID = 2.8 A; Tj = 150 °C - 93 108 mΩ VGS = 2.5 V; ID = 2.4 A; Tj = 25 °C - 71 83 mΩ VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C - 83 94 mΩ gfs forward VDS = 10 V; ID = 3 A; Tj = 25 °C - 11 - S transconductance RG gate resistance Tj = 25 °C; f = 1 MHz - 1.8 - Ω
Dynamic characteristics
QG(tot) total gate charge VDS = 10 V; ID = 2.8 A; VGS = 4.5 V; - 3.8 6 nC Q Tj = 25 °C GS gate-source charge - 0.3 - nC QGD gate-drain charge - 0.9 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 291 - pF C Tj = 25 °C oss output capacitance - 52 - pF Crss reverse transfer - 43 - pF capacitance td(on) turn-on delay time VDS = 10 V; ID = 2.8 A; VGS = 4.5 V; - 8 - ns t RG(ext) = 6 Ω; Tj = 25 °C r rise time - 23 - ns td(off) turn-off delay time - 35 - ns tf fall time - 12 - ns
Source-drain diode
VSD source-drain voltage IS = 0.9 A; VGS = 0 V; Tj = 25 °C - 0.7 1.2 V PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 6 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V breakdown voltage VGSth gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 1 V voltage IDSS drain leakage current VDS = 20 V; VGS = 0 V - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -5 µA RDSon drain-source on-state VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C - 63 73 mΩ resistance VGS = 4.5 V; ID = 2.8 A; Tj = 150 °C - 93 108 mΩ VGS = 2.5 V; ID = 2.4 A; Tj = 25 °C - 71 83 mΩ VGS = 1.8 V; ID = 0.8 A; Tj = 25 °C - 83 94 mΩ gfs forward VDS = 10 V; ID = 3 A; Tj = 25 °C - 11 - S transconductance RG gate resistance Tj = 25 °C; f = 1 MHz - 1.8 - Ω
Dynamic characteristics
QG(tot) total gate charge VDS = 10 V; ID = 2.8 A; VGS = 4.5 V; - 3.8 6 nC Q Tj = 25 °C GS gate-source charge - 0.3 - nC QGD gate-drain charge - 0.9 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 291 - pF C Tj = 25 °C oss output capacitance - 52 - pF Crss reverse transfer - 43 - pF capacitance td(on) turn-on delay time VDS = 10 V; ID = 2.8 A; VGS = 4.5 V; - 8 - ns t RG(ext) = 6 Ω; Tj = 25 °C r rise time - 23 - ns td(off) turn-off delay time - 35 - ns tf fall time - 12 - ns
Source-drain diode
VSD source-drain voltage IS = 0.9 A; VGS = 0 V; Tj = 25 °C - 0.7 1.2 V PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 6 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents