Datasheet PMV65UNEA (Nexperia) - 3
| 制造商 | Nexperia |
| 描述 | 20 V, N-channel Trench MOSFET |
| 页数 / 页 | 15 / 3 — Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. 8. Limiting values. … |
| 修订版 | 23202103 |
| 文件格式/大小 | PDF / 258 Kb |
| 文件语言 | 英语 |
Nexperia. PMV65UNEA. 20 V, N-channel Trench MOSFET. 8. Limiting values. Table 5. Limiting values. Symbol. Parameter. Conditions. Min. Max
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Nexperia PMV65UNEA 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage Tj = 25 °C; Tamb = 25 °C -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 2.8 A VGS = 4.5 V; Tamb = 100 °C [1] - 1.8 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 11 A EDS(AL)S non-repetitive drain- Tj(init) = 25 °C; ID = 0.3 A; DUT in - 5.6 mJ source avalanche avalanche (unclamped) energy Ptot total power dissipation Tamb = 25 °C [2] - 490 mW [1] - 940 mW Tsp = 25 °C - 6.25 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - 0.9 A
ESD Maximum rating
VESD electrostatic discharge HBM - 2000 V voltage [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 3 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents
Nexperia PMV65UNEA 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - 20 V VGS gate-source voltage Tj = 25 °C; Tamb = 25 °C -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 2.8 A VGS = 4.5 V; Tamb = 100 °C [1] - 1.8 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 11 A EDS(AL)S non-repetitive drain- Tj(init) = 25 °C; ID = 0.3 A; DUT in - 5.6 mJ source avalanche avalanche (unclamped) energy Ptot total power dissipation Tamb = 25 °C [2] - 490 mW [1] - 940 mW Tsp = 25 °C - 6.25 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tamb = 25 °C [1] - 0.9 A
ESD Maximum rating
VESD electrostatic discharge HBM - 2000 V voltage [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMV65UNEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 17 March 2017 3 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information 16. Contents