Datasheet PMV65ENEA (Nexperia) - 8
| 制造商 | Nexperia |
| 描述 | 40 V, N-channel Trench MOSFET |
| 页数 / 页 | 16 / 8 — Nexperia. PMV65ENEA. 40 V, N-channel Trench MOSFET. Fig. 11. Normalized … |
| 修订版 | 20201703 |
| 文件格式/大小 | PDF / 733 Kb |
| 文件语言 | 英语 |
Nexperia. PMV65ENEA. 40 V, N-channel Trench MOSFET. Fig. 11. Normalized drain-source on-state resistance
该数据表的模型线
文件文字版本
Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET
aaa-022640 12 aaa-022641 2 ID a (A) 1.5 6 1 0.5 Tj = 150 °C Tj = 25 °C 0 0 0 1 2 3 4 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID x RDSon
Fig. 11. Normalized drain-source on-state resistance Fig. 10. Transfer characteristics: drain current as a as a function of ambient temperature; typical function of gate-source voltage; typical values values
aaa-022642 3 aaa-022643 103 VGS(th) max C (V) (pF) Ciss 2 102 typ Coss C 1 min 10 rss 0 1 -60 0 60 120 180 10-1 1 102 10 Tj (°C) VDS (V) ID = 250 μA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances ambient temperature as a function of drain-source voltage; typical values
PMV65ENEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 28 April 2016 8 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
aaa-022640 12 aaa-022641 2 ID a (A) 1.5 6 1 0.5 Tj = 150 °C Tj = 25 °C 0 0 0 1 2 3 4 -60 0 60 120 180 VGS (V) Tj (°C) VDS > ID x RDSon
Fig. 11. Normalized drain-source on-state resistance Fig. 10. Transfer characteristics: drain current as a as a function of ambient temperature; typical function of gate-source voltage; typical values values
aaa-022642 3 aaa-022643 103 VGS(th) max C (V) (pF) Ciss 2 102 typ Coss C 1 min 10 rss 0 1 -60 0 60 120 180 10-1 1 102 10 Tj (°C) VDS (V) ID = 250 μA; VDS = VGS f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances ambient temperature as a function of drain-source voltage; typical values
PMV65ENEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 28 April 2016 8 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information