Datasheet PMV65ENEA (Nexperia) - 5

制造商Nexperia
描述40 V, N-channel Trench MOSFET
页数 / 页16 / 5 — Nexperia. PMV65ENEA. 40 V, N-channel Trench MOSFET. Symbol. Parameter. …
修订版20201703
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Nexperia. PMV65ENEA. 40 V, N-channel Trench MOSFET. Symbol. Parameter. Conditions. Min. Typ. Max. Unit

Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit

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Nexperia PMV65ENEA 40 V, N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance - 17 20 K/W from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2. aaa-022634 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.50 0.33 0.25 0.20 0.10 0.05 10 0.02 0.01 0 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-022635 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.50 0.33 0.25 0.20 0.10 0.05 10 0.02 0.01 0 110-3 10-2 10-1 1 102 103 10 tp (s) FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV65ENEA All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 28 April 2016 5 / 16
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information