Datasheet 1N916 (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | Small Signal Switching Diodes in DO−204AH (DO−35) Package |
| 页数 / 页 | 7 / 4 — 1N91x, 1N4x48, FDLL914, FDLL4x48. TYPICAL PERFORMANCE CHARACTERISTICS. T … |
| 文件格式/大小 | PDF / 223 Kb |
| 文件语言 | 英语 |
1N91x, 1N4x48, FDLL914, FDLL4x48. TYPICAL PERFORMANCE CHARACTERISTICS. T = 25 oC. Ta = 25 oC. [ns]. y Time, t
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1N91x, 1N4x48, FDLL914, FDLL4x48 TYPICAL PERFORMANCE CHARACTERISTICS
0.90 4.0
T = 25 oC Ta = 25 oC A
3.5
[ns] rr
0.85 3.0
y Time, t
2.5 0.80 2.0
Total Capacitance (pF) se Recover
1.5
Rever
0.75 1.0 0 2 4 6 8 10 12 14 10 20 30 40 50 60
REVERSE VOLTAGE (V) Reverse Recovery Current, I rr [mA]
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Figure 7. Total Capacitance Figure 8. Reverse Recovery Time vs. Reverse Recovery Current
500 500
W]
400 400
[m DO−35 and LL−34 / SOD−80 D
300 300
IF(AV) − Average Rectified Current − mA
200 200
Current (mA) Dissipation, P
100 100
ower P
0 0 0 50 100 150 0 50 100 150 200
Ambient Temperature ( oC) Temperature ( oC) Figure 9. Average Rectified Current (IF(AV)) Figure 10. Power Derating Curve vs. Ambient Temperature (TA) www.onsemi.com 4
0.90 4.0
T = 25 oC Ta = 25 oC A
3.5
[ns] rr
0.85 3.0
y Time, t
2.5 0.80 2.0
Total Capacitance (pF) se Recover
1.5
Rever
0.75 1.0 0 2 4 6 8 10 12 14 10 20 30 40 50 60
REVERSE VOLTAGE (V) Reverse Recovery Current, I rr [mA]
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
Figure 7. Total Capacitance Figure 8. Reverse Recovery Time vs. Reverse Recovery Current
500 500
W]
400 400
[m DO−35 and LL−34 / SOD−80 D
300 300
IF(AV) − Average Rectified Current − mA
200 200
Current (mA) Dissipation, P
100 100
ower P
0 0 0 50 100 150 0 50 100 150 200
Ambient Temperature ( oC) Temperature ( oC) Figure 9. Average Rectified Current (IF(AV)) Figure 10. Power Derating Curve vs. Ambient Temperature (TA) www.onsemi.com 4