Datasheet MCR106 (Digitron Semiconductors)
| 制造商 | Digitron Semiconductors |
| 描述 | 2.55 A Silicon Controlled Rectifier |
| 页数 / 页 | 3 / 1 — High-reliability discrete products. and engineering services since 1977. … |
| 文件格式/大小 | PDF / 576 Kb |
| 文件语言 | 英语 |
High-reliability discrete products. and engineering services since 1977. FEATURES. MAXIMUM RATINGS. Rating. Symbol. Value. Unit
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MCR106 SERIES
High-reliability discrete products
SILICON CONTROLLED RECTIFIERS
and engineering services since 1977 FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
.
Rating Symbol Value Unit Peak repetitive off-state voltage
(1) (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR106-1 30 MCR106-2 60 MCR106-3 VDRM 100 V MCR106-4 VRRM 200 MCR106-5 300 MCR106-6 400 MCR106-7 500 MCR106-8 600
On-state RMS current
(180° conduction angles, TC = 93°C) IT(RMS) 4.0 A
Average on-state current
(180° conduction angles, TC = 93°C) IT(AV) 2.55 A
Peak non-repetitive surge current
I A (half-cycle, sine wave, 60Hz, T TSM J = 110°C) 25
Circuit fusing consideration
(t = 8.3ms) I2t 2.6 A2s
Forward peak gate power
(pulse width ≤ 1.0µs, TC = 93°C) PGM 0.5 W
Forward average gate power
(t = 8.3ms, TC = 93°C) PG(AV) 0.1 W
Forward peak gate current
(pulse width ≤ 1.0µs, TC = 93°C) IGM 0.2 A
Peak reverse gate voltage
V V (pulse width ≤ 1.0µs, T RGM C = 93°C) 6.0
Operating junction temperature range
TJ -40 to +110 °C
Storage temperature range
Tstg -40 to +150 °C
Mounting torque
(2) - 6.0 In. lb. Note 1: VDRM and VRRM for al types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shal not be applied concurrent with negative potential on the anode. Blocking voltages shal not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. For soldering purposes, soldering temperatures should not exceed +200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case
RӨJC 3.0 °C/W
Thermal resistance, junction to ambient
RӨJA 75 °C/W
Lead solder temperature
T °C (lead length ≥ 1/8” from case, 10s max) L 260
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward or reverse blocking current
IDRM, µA (VAK = Rated VDRM or VRRM, RGK = 1000Ω) IRRM Rev. 20130115
High-reliability discrete products
SILICON CONTROLLED RECTIFIERS
and engineering services since 1977 FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
.
Rating Symbol Value Unit Peak repetitive off-state voltage
(1) (TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open) MCR106-1 30 MCR106-2 60 MCR106-3 VDRM 100 V MCR106-4 VRRM 200 MCR106-5 300 MCR106-6 400 MCR106-7 500 MCR106-8 600
On-state RMS current
(180° conduction angles, TC = 93°C) IT(RMS) 4.0 A
Average on-state current
(180° conduction angles, TC = 93°C) IT(AV) 2.55 A
Peak non-repetitive surge current
I A (half-cycle, sine wave, 60Hz, T TSM J = 110°C) 25
Circuit fusing consideration
(t = 8.3ms) I2t 2.6 A2s
Forward peak gate power
(pulse width ≤ 1.0µs, TC = 93°C) PGM 0.5 W
Forward average gate power
(t = 8.3ms, TC = 93°C) PG(AV) 0.1 W
Forward peak gate current
(pulse width ≤ 1.0µs, TC = 93°C) IGM 0.2 A
Peak reverse gate voltage
V V (pulse width ≤ 1.0µs, T RGM C = 93°C) 6.0
Operating junction temperature range
TJ -40 to +110 °C
Storage temperature range
Tstg -40 to +150 °C
Mounting torque
(2) - 6.0 In. lb. Note 1: VDRM and VRRM for al types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shal not be applied concurrent with negative potential on the anode. Blocking voltages shal not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. For soldering purposes, soldering temperatures should not exceed +200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal resistance, junction to case
RӨJC 3.0 °C/W
Thermal resistance, junction to ambient
RӨJA 75 °C/W
Lead solder temperature
T °C (lead length ≥ 1/8” from case, 10s max) L 260
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak forward or reverse blocking current
IDRM, µA (VAK = Rated VDRM or VRRM, RGK = 1000Ω) IRRM Rev. 20130115