Datasheet CLF24H4LS300P (Ampleon) - 3
| 制造商 | Ampleon |
| 描述 | RF power GaN-SiC HEMT |
| 页数 / 页 | 11 / 3 — CLF24H4LS300P. RF power GaN-SiC HEMT. 6. Characteristics. Table 6. DC … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
CLF24H4LS300P. RF power GaN-SiC HEMT. 6. Characteristics. Table 6. DC characteristics. Symbol Parameter. Conditions. Min. Typ. Max. Unit
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CLF24H4LS300P RF power GaN-SiC HEMT 6. Characteristics Table 6. DC characteristics
Tamb = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 31.2 mA 3.12 2.72 2.32 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 624 mA 3 2.63 2.2 V ID(leak) drain leakage current VDS = 50 V; VGS = 10 V - - 7.55 mA IGSS gate leakage current VDS = 0 V; VGS = 8 V - - 1.51 mA IDSX drain cut-off current VDS = 20 V; VGS = 2 V - 22.4 - A
Table 7. RF characteristics
Test signal: pulsed at 2450 MHz; RF performance at VDS = 50 V; VGS = 4 V; tp = 200 s; = 10 %; Tamb = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 350 W - 15 - dB RLin input return loss PL = 350 W - 10 - dB D drain efficiency PL = 350 W - 70 - %
Table 8. Ruggedness performance
RF performance at Tamb = 25 C; VGS = 5 V; in a class-C demo.
Test signal f PL VSWR VDS Result (MHz) (W) (V)
CW 2450 320 20 : 1 at all phase angles 50 no device degradation pulsed CW [1] 2450 450 20 : 1 at all phase angles 70 no device degradation [1] tp = 100 s; = 20 %. CLF24H4LS300P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 30 July 2024 3 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
CLF24H4LS300P RF power GaN-SiC HEMT 6. Characteristics Table 6. DC characteristics
Tamb = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 31.2 mA 3.12 2.72 2.32 V VGSq gate-source quiescent voltage VDS = 50 V; ID = 624 mA 3 2.63 2.2 V ID(leak) drain leakage current VDS = 50 V; VGS = 10 V - - 7.55 mA IGSS gate leakage current VDS = 0 V; VGS = 8 V - - 1.51 mA IDSX drain cut-off current VDS = 20 V; VGS = 2 V - 22.4 - A
Table 7. RF characteristics
Test signal: pulsed at 2450 MHz; RF performance at VDS = 50 V; VGS = 4 V; tp = 200 s; = 10 %; Tamb = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gp power gain PL = 350 W - 15 - dB RLin input return loss PL = 350 W - 10 - dB D drain efficiency PL = 350 W - 70 - %
Table 8. Ruggedness performance
RF performance at Tamb = 25 C; VGS = 5 V; in a class-C demo.
Test signal f PL VSWR VDS Result (MHz) (W) (V)
CW 2450 320 20 : 1 at all phase angles 50 no device degradation pulsed CW [1] 2450 450 20 : 1 at all phase angles 70 no device degradation [1] tp = 100 s; = 20 %. CLF24H4LS300P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2024. All rights reserved.
Product data sheet Rev. 1 — 30 July 2024 3 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents