Datasheet RTR020P02 (Rohm)
| 制造商 | Rohm |
| 描述 | 2.5V Drive Pch MOSFET |
| 页数 / 页 | 5 / 1 — RTR020P02. Structure. External dimensions. TSMT3. Features. Application. … |
| 文件格式/大小 | PDF / 94 Kb |
| 文件语言 | 英语 |
RTR020P02. Structure. External dimensions. TSMT3. Features. Application. Packaging specifications. Equivalent circuit
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文件文字版本
RTR020P02 Tr ansistors 2.5V Drive Pch MOS FET
RTR020P02
z
Structure
z
External dimensions
(Unit : mm) Silicon P-channel MOS FET
TSMT3
1.0MAX 2.9 0.85 0.4 0.7 z
Features
(3) 1) Low On-resistance. 1.6 2.8 0~0.1 2) Built-in G-S Protection Diode. (1) (2) 0.6 ~ 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.3 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source z
Application
Abbreviated symbol : TX (3) Drain Power switching, DC / DC converter. z
Packaging specifications
z
Equivalent circuit
Package Taping (3) Type Code TL Basic ordering unit (pieces) 3000 RTR020P02 (1) ∗2 ∗1 (2) (1) Gate (2) Source ∗1 ESD PROTECTION DIODE (3) Drain ∗2 BODY DIODE z
Absolute maximum ratings
(Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS −20 V Gate-source voltage VGSS ±12 V Continuous ID ±2.0 A Drain current ∗1 Pulsed IDP ±8.0 A Source current Continuous IS −0.8 A (Body diode) ∗1 Pulsed ISP −3.2 A ∗2 Total power dissipation PD 1.0 W Channel temperature Tch 150 °C Range of Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board z
Thermal resistance
Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) ∗ 125 °C / W ∗ Mounted on a ceramic board. Rev.A 1/4 Document Outline 2.5V Drive Pch MOS FET RTR020P02
RTR020P02
z
Structure
z
External dimensions
(Unit : mm) Silicon P-channel MOS FET
TSMT3
1.0MAX 2.9 0.85 0.4 0.7 z
Features
(3) 1) Low On-resistance. 1.6 2.8 0~0.1 2) Built-in G-S Protection Diode. (1) (2) 0.6 ~ 0.95 0.95 3) Small Surface Mount Package (TSMT3). 0.3 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source z
Application
Abbreviated symbol : TX (3) Drain Power switching, DC / DC converter. z
Packaging specifications
z
Equivalent circuit
Package Taping (3) Type Code TL Basic ordering unit (pieces) 3000 RTR020P02 (1) ∗2 ∗1 (2) (1) Gate (2) Source ∗1 ESD PROTECTION DIODE (3) Drain ∗2 BODY DIODE z
Absolute maximum ratings
(Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS −20 V Gate-source voltage VGSS ±12 V Continuous ID ±2.0 A Drain current ∗1 Pulsed IDP ±8.0 A Source current Continuous IS −0.8 A (Body diode) ∗1 Pulsed ISP −3.2 A ∗2 Total power dissipation PD 1.0 W Channel temperature Tch 150 °C Range of Storage temperature Tstg −55 to +150 °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board z
Thermal resistance
Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) ∗ 125 °C / W ∗ Mounted on a ceramic board. Rev.A 1/4 Document Outline 2.5V Drive Pch MOS FET RTR020P02