Datasheet IRF250 (Inchange Semiconductor) - 2
| 制造商 | Inchange Semiconductor |
| 描述 | N-Channel MOSFET Transistor in TO-3 Package |
| 页数 / 页 | 2 / 2 — isc N-Channel MOSFET Transistor. IRF250. ELECTRICAL CHARACTERISTICS … |
| 文件格式/大小 | PDF / 285 Kb |
| 文件语言 | 英语 |
isc N-Channel MOSFET Transistor. IRF250. ELECTRICAL CHARACTERISTICS (TC=25. SYMBOL. PARAMETER. CONDITIONS. MIN. TYPE. MAX. UNIT. NOTICE
该数据表的模型线
文件文字版本
isc N-Channel MOSFET Transistor IRF250
·
ELECTRICAL CHARACTERISTICS (TC=25
℃
) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 200 - - V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2 - 4 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A - - 0.085 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 - - ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 - - 250 uA VSD Diode Forward Voltage IS=30A; VGS=0 - - 2.0 V
NOTICE
： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifical y disclaims any and al liability, including without limitation special, consequential or incidental damages.
isc website
：
www.iscsemi.com
2
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(TC=25℃) PARAMETER THERMAL CHARACTERISTICS isc N-Channel MOSFET Transistor
·
ELECTRICAL CHARACTERISTICS (TC=25
℃
) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 200 - - V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2 - 4 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A - - 0.085 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 - - ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS=0 - - 250 uA VSD Diode Forward Voltage IS=30A; VGS=0 - - 2.0 V
NOTICE
： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifical y disclaims any and al liability, including without limitation special, consequential or incidental damages.
isc website
：
www.iscsemi.com
2
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(TC=25℃) PARAMETER THERMAL CHARACTERISTICS isc N-Channel MOSFET Transistor