Datasheet BIDW30N60T (Bourns) - 6

制造商Bourns
描述Insulated Gate Bipolar Transistor (IGBT)
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BIDW30N60T Insulated Gate Bipolar Transistor (IGBT). Electrical Characteristic Performance (continued)

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued)

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BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) Electrical Characteristic Performance (continued) Typical Switching Loss Characteristics vs IC Typical Diode IF vs VF
10000 100 Common Emitter VCC = 400 V, VGE = 15 V RG = 10 Ω, TC = 25 °C E(on) (A) 1000 F TC = 125 °C TC = 25 °C E(off) 10 100 Switching Loss (µJ) Forward Current – I 10 1 0 10 20 30 40 50 60 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector Current – IC (A) Forward Voltage – VF (V)
Typical Reverse Recovery Time vs IF Typical Reverse Recovery Charge vs IF
45 100 90 di/dt = 200 A/µs (ns) (nC) rr 80 rr di/dt = 100 A/µs 40 70 di/dt = 200 A/µs 60 di/dt = 100 A/µs 50 35 40 Reverse Recovery Time – t Reverse Recovery Charge – Q 30 30 20 0 20 40 60 0 20 40 60 Forward Current – IF (A) Forward Current – IF (A) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.