Datasheet BIDW30N60T (Bourns) - 3
| 制造商 | Bourns |
| 描述 | Insulated Gate Bipolar Transistor (IGBT) |
| 页数 / 页 | 10 / 3 — BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)
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BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) Diode Switching Characteristics (TC = 25 °C, unless otherwise specified) Value Parameter Symbol Conditions Unit Min. Typ. Max.
Reverse Recovery Time trr dlF/dt = 200 A/µs — 40 — ns I Reverse Recovery Charge Q F = 30.0 A rr — 90 — nC
Electrical Characteristic Performance Typical Output Characteristics Typical Output Characteristics
80 80 Common Emitter Common Emitter 70 TC = 25 °C 70 TC = 125 °C VGE = 9 V V 60 V GE = 9 V GE = 11 V 60 V (A) V (A) GE = 11 V C GE = 13 V C V 50 V GE = 13 V GE = 15 V 50 V VGE = 15 V GE = 17 V V 40 40 GE = 17 V 30 30 Collector Current – I 20 Collector Current – I 20 10 10 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Collector-emitter Voltage – VCE (V) Collector-emitter Voltage – VCE (V)
Typical Saturation Voltage Characteristics Typical Transfer Characteristics
60 50 Common Emitter Common Emitter V V GE = 15 V CE = 10 V 50 40 (A) C 40 (A) C T 30 C = 25 °C 30 TC = 125 °C 20 20 Collector Current – I Collector Current – I TC = 125 °C 10 10 TC = 25 °C 0 0 0 1 2 3 4 0 5 10 15 Collector-emitter Voltage – VCE (V) Gate-emitter Voltage – VGE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
Reverse Recovery Time trr dlF/dt = 200 A/µs — 40 — ns I Reverse Recovery Charge Q F = 30.0 A rr — 90 — nC
Electrical Characteristic Performance Typical Output Characteristics Typical Output Characteristics
80 80 Common Emitter Common Emitter 70 TC = 25 °C 70 TC = 125 °C VGE = 9 V V 60 V GE = 9 V GE = 11 V 60 V (A) V (A) GE = 11 V C GE = 13 V C V 50 V GE = 13 V GE = 15 V 50 V VGE = 15 V GE = 17 V V 40 40 GE = 17 V 30 30 Collector Current – I 20 Collector Current – I 20 10 10 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Collector-emitter Voltage – VCE (V) Collector-emitter Voltage – VCE (V)
Typical Saturation Voltage Characteristics Typical Transfer Characteristics
60 50 Common Emitter Common Emitter V V GE = 15 V CE = 10 V 50 40 (A) C 40 (A) C T 30 C = 25 °C 30 TC = 125 °C 20 20 Collector Current – I Collector Current – I TC = 125 °C 10 10 TC = 25 °C 0 0 0 1 2 3 4 0 5 10 15 Collector-emitter Voltage – VCE (V) Gate-emitter Voltage – VGE (V) Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.