Datasheet BIDD05N60T (Bourns)
| 制造商 | Bourns |
| 描述 | Insulated Gate Bipolar Transistor (IGBT) |
| 页数 / 页 | 10 / 1 — Features. Applications. K 2020. D05N60T. BIDD05N60T Insulated Gate … |
| 文件格式/大小 | PDF / 250 Kb |
| 文件语言 | 英语 |
Features. Applications. K 2020. D05N60T. BIDD05N60T Insulated Gate Bipolar Transistor (IGBT). General Information
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Features Applications
■ 600V, 5A, Low VCE(sat) ■ Switch-Mode Power Supplies (SMPS) ■ Novel field stop technology ■ Uninterruptible Power Sources (UPS)
K 2020
■ Optimized for conduction ■ Power Factor Correction (PFC)
D05N60T
■ Robust ■ RoHS compliant*
BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) General Information Additional Information
The Bourns® Model BIDD05N60T IGBT device combines technology from a MOS gate Click these links for more information: and a bipolar transistor, resulting in an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT SELECTOR LIBRARY increases the robustness of the device.
Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified) Parameter Symbol Value Unit
Collector-Emitter Voltage VCES 600 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 10 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 5 A Pulsed Collector Current, tp limited by Tjmax ICP 15 A Gate-Emitter Voltage VGE ±30 V Continuous Forward Current (TC = 25 °C), limited by Tjmax IF 10 A Short-circuit Withstand Time (VCE = 300 V, VGE = 15 V) TSC 10 μs Total Power Dissipation Ptotal 82 W Storage Temperature TSTG -55 to +150 °C Operating Junction Temperature Tj -55 to +150 °C
Thermal Resistance Parameter Symbol Max Unit
IGBT Thermal Resistance Junction - Case Rth(j-c)_IGBT 1.51 °C/W Diode Thermal Resistance Junction - Case Rth(j-c)_Diode 2.14 °C/W
Typical Part Marking Internal Circuit
2 2 1 – GATE 2 – COLLECTOR *1 MFR’S D05N60T DEVICE CODE 3 – EMITTER TRADEMARK 1 YYYYYYY LOT ID: *1 – BUILT-IN FRD 1ST CHARACTER INDICATES PRODUCTION LINE 2ND CHARACTER INDICATES GRADE 3RD CHARACTER INDICATES YEAR OF MANUFACTURE 4TH CHARACTER INDICATES MONTH OF MANUFACTURE 3 5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. (7TH CHARACTER COULD BE OMITTED) 1 3 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice.
WARNING Cancer and
Users should verify actual device performance in their specific applications.
Reproductive Harm
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, www.P65Warnings.ca.gov and at www.bourns.com/docs/legal/disclaimer.pdf.
■ 600V, 5A, Low VCE(sat) ■ Switch-Mode Power Supplies (SMPS) ■ Novel field stop technology ■ Uninterruptible Power Sources (UPS)
K 2020
■ Optimized for conduction ■ Power Factor Correction (PFC)
D05N60T
■ Robust ■ RoHS compliant*
BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) General Information Additional Information
The Bourns® Model BIDD05N60T IGBT device combines technology from a MOS gate Click these links for more information: and a bipolar transistor, resulting in an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT SELECTOR LIBRARY increases the robustness of the device.
Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified) Parameter Symbol Value Unit
Collector-Emitter Voltage VCES 600 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 10 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 5 A Pulsed Collector Current, tp limited by Tjmax ICP 15 A Gate-Emitter Voltage VGE ±30 V Continuous Forward Current (TC = 25 °C), limited by Tjmax IF 10 A Short-circuit Withstand Time (VCE = 300 V, VGE = 15 V) TSC 10 μs Total Power Dissipation Ptotal 82 W Storage Temperature TSTG -55 to +150 °C Operating Junction Temperature Tj -55 to +150 °C
Thermal Resistance Parameter Symbol Max Unit
IGBT Thermal Resistance Junction - Case Rth(j-c)_IGBT 1.51 °C/W Diode Thermal Resistance Junction - Case Rth(j-c)_Diode 2.14 °C/W
Typical Part Marking Internal Circuit
2 2 1 – GATE 2 – COLLECTOR *1 MFR’S D05N60T DEVICE CODE 3 – EMITTER TRADEMARK 1 YYYYYYY LOT ID: *1 – BUILT-IN FRD 1ST CHARACTER INDICATES PRODUCTION LINE 2ND CHARACTER INDICATES GRADE 3RD CHARACTER INDICATES YEAR OF MANUFACTURE 4TH CHARACTER INDICATES MONTH OF MANUFACTURE 3 5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO. (7TH CHARACTER COULD BE OMITTED) 1 3 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice.
WARNING Cancer and
Users should verify actual device performance in their specific applications.
Reproductive Harm
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, www.P65Warnings.ca.gov and at www.bourns.com/docs/legal/disclaimer.pdf.