Datasheet NJW21193G, NJW21194G (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | 16 Amperes Complementary Silicon Power Transistors 250 Volts, 200 Watts |
| 页数 / 页 | 9 / 3 — NJW21193G (PNP) NJW21194G (NPN). ELECTRICAL CHARACTERISTICS. … |
| 文件格式/大小 | PDF / 243 Kb |
| 文件语言 | 英语 |
NJW21193G (PNP) NJW21194G (NPN). ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS
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NJW21193G (PNP) NJW21194G (NPN) ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) 250 − − Vdc (IC = 100 mAdc, IB = 0) Collector Cutoff Current ICEO − − 100 mAdc (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current IEBO − − 100 mAdc (VCE = 5 Vdc, IC = 0) Collector Cutoff Current ICEX − − 100 mAdc (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b Adc (VCE = 50 Vdc, t = 1 s (non−repetitive) 4.0 − − (VCE = 80 Vdc, t = 1 s (non−repetitive) 2.25 − −
ON CHARACTERISTICS
DC Current Gain hFE (IC = 8 Adc, VCE = 5 Vdc) 20 − 80 (IC = 16 Adc, IB = 5 Adc) 8 − − Base−Emitter On Voltage VBE(on) − − 2.2 Vdc (IC = 8 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 8 Adc, IB = 0.8 Adc) − − 1.4 (IC = 16 Adc, IB = 3.2 Adc) − − 4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output THD % VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE unmatched − 0.8 − (Matched pair hFE = 50 @ 5 A/5 V) hFE matched − 0.08 − Current Gain Bandwidth Product fT 4 − − MHz (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance Cob − − 500 pF (VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
PNP NJW21193G NPN NJW21194G
6.5 8.0 (MHz) VCE = 10 V (MHz) 6.0 7.0 10 V 5.5 6.0 5 V 5.0 5.0 VCE = 5 V 4.0 4.5 3.0 GAIN BANDWIDTH PRODUCT 4.0 GAIN BANDWIDTH PRODUCT 2.0 T T 3.5 J = 25°C 1.0 J = 25°C ftest = 1 MHz ftest = 1 MHz f, CURRENT T 3.0 f, CURRENT T 0 0.1 1.0 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Figure 2. Typical Current Gain Bandwidth Product Bandwidth Product http://onsemi.com 2
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) 250 − − Vdc (IC = 100 mAdc, IB = 0) Collector Cutoff Current ICEO − − 100 mAdc (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current IEBO − − 100 mAdc (VCE = 5 Vdc, IC = 0) Collector Cutoff Current ICEX − − 100 mAdc (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b Adc (VCE = 50 Vdc, t = 1 s (non−repetitive) 4.0 − − (VCE = 80 Vdc, t = 1 s (non−repetitive) 2.25 − −
ON CHARACTERISTICS
DC Current Gain hFE (IC = 8 Adc, VCE = 5 Vdc) 20 − 80 (IC = 16 Adc, IB = 5 Adc) 8 − − Base−Emitter On Voltage VBE(on) − − 2.2 Vdc (IC = 8 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 8 Adc, IB = 0.8 Adc) − − 1.4 (IC = 16 Adc, IB = 3.2 Adc) − − 4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output THD % VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE unmatched − 0.8 − (Matched pair hFE = 50 @ 5 A/5 V) hFE matched − 0.08 − Current Gain Bandwidth Product fT 4 − − MHz (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance Cob − − 500 pF (VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
PNP NJW21193G NPN NJW21194G
6.5 8.0 (MHz) VCE = 10 V (MHz) 6.0 7.0 10 V 5.5 6.0 5 V 5.0 5.0 VCE = 5 V 4.0 4.5 3.0 GAIN BANDWIDTH PRODUCT 4.0 GAIN BANDWIDTH PRODUCT 2.0 T T 3.5 J = 25°C 1.0 J = 25°C ftest = 1 MHz ftest = 1 MHz f, CURRENT T 3.0 f, CURRENT T 0 0.1 1.0 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Figure 2. Typical Current Gain Bandwidth Product Bandwidth Product http://onsemi.com 2