Datasheet NV6288 (Navitas Semiconductor)
| 制造商 | Navitas Semiconductor |
| 描述 | GaNSense Motor Drive IC in half-bridge configuration |
| 页数 / 页 | 34 / 1 — NV6288. GaNSense™ Motor Drive. in half-bridge configuration. 1. Features. … |
| 文件格式/大小 | PDF / 2.5 Mb |
| 文件语言 | 英语 |
NV6288. GaNSense™ Motor Drive. in half-bridge configuration. 1. Features. GaNSense™ Motor Drive half-bridge Power IC
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NV6288 GaNSense™ Motor Drive IC in half-bridge configuration 1. Features GaNSense™ Motor Drive half-bridge Power IC
• Wide V CC range (10 to 24 V) • Accurate loss-less bi-directional current sensing • 3.3, 5, 12 V PWM input compatible • Floating high-side with internal level shift • Two independent logic inputs with hysteresis • 200V/ns common mode transient immunity • Integrated high-side bootstrap • Shoot-through protection • Turn-on and turn-off dV/dt control (low-side and high- side) • Short circuit protection, low-side and high-side • Over-temperature protection • Autonomous low-current standby mode • Autonomous synchronous rectification mode
QFN 8 x 10 mm Simplified schematic
• Fault output and enable input • 800 V transient voltage rating
3. Description
• 650 V continuous voltage rating This half-bridge GaNFast™ power IC integrates high • 120 mΩ high-side FET, 120 mΩ low-side FET performance eMode GaN FETs with integrated gate drive, • 2 KV ESD Rating (HBM) control and protection to achieve unprecedented high- • 2 MHz operation frequency and high efficiency operation. GaNSense™ motor
Small, low profile SMT QFN
drive technology is also integrated which enables real-time, • accurate sensing of voltage, current and temperature to further 8x10 mm footprint, 0.85 mm profile improve performance and robustness not achieved by any • Minimized package inductance discrete GaN or discrete silicon device. GaNSense™ motor • Enlarged cooling pads drive enables integrated loss-less current sensing which
Sustainability
eliminates external current sensing resistors and increases • RoHS, Pb-free, REACH-compliant system efficiency. GaNSense™ motor drive also enables short • Up to 40% energy savings vs Si solutions circuit and over-temperature protection to increase system • robustness, while auto-standby mode increases light, tiny & no- System level 4kg CO2 Carbon Footprint reduction load efficiency. These GaN ICs combine the highest dV/dt
Product Reliability
immunity, high-speed integrated drive and thermally optimized, • 20-year limited warranty low-inductance, QFN packaging to enable designers to achieve simple, quick, and reliable solutions. Navitas’ GaN IC
2. Topologies / Applications
technology extends the capabilities of traditional topologies such as active clamp flyback, half-bridge, buck/boost, LLC and • AC-DC, DC-DC other resonant converters to reach MHz+ frequencies with very • ACF, buck, boost, half bridge, full bridge, LLC, AHB, high efficiencies and low EMI to achieve unprecedented power Class D, PFC, Motor Drive densities at a very attractive cost structure.
4. Typical Application Circuits
Motor inverter LLC
Final Datasheet 1 Rev Apr. 29, 2025
• Wide V CC range (10 to 24 V) • Accurate loss-less bi-directional current sensing • 3.3, 5, 12 V PWM input compatible • Floating high-side with internal level shift • Two independent logic inputs with hysteresis • 200V/ns common mode transient immunity • Integrated high-side bootstrap • Shoot-through protection • Turn-on and turn-off dV/dt control (low-side and high- side) • Short circuit protection, low-side and high-side • Over-temperature protection • Autonomous low-current standby mode • Autonomous synchronous rectification mode
QFN 8 x 10 mm Simplified schematic
• Fault output and enable input • 800 V transient voltage rating
3. Description
• 650 V continuous voltage rating This half-bridge GaNFast™ power IC integrates high • 120 mΩ high-side FET, 120 mΩ low-side FET performance eMode GaN FETs with integrated gate drive, • 2 KV ESD Rating (HBM) control and protection to achieve unprecedented high- • 2 MHz operation frequency and high efficiency operation. GaNSense™ motor
Small, low profile SMT QFN
drive technology is also integrated which enables real-time, • accurate sensing of voltage, current and temperature to further 8x10 mm footprint, 0.85 mm profile improve performance and robustness not achieved by any • Minimized package inductance discrete GaN or discrete silicon device. GaNSense™ motor • Enlarged cooling pads drive enables integrated loss-less current sensing which
Sustainability
eliminates external current sensing resistors and increases • RoHS, Pb-free, REACH-compliant system efficiency. GaNSense™ motor drive also enables short • Up to 40% energy savings vs Si solutions circuit and over-temperature protection to increase system • robustness, while auto-standby mode increases light, tiny & no- System level 4kg CO2 Carbon Footprint reduction load efficiency. These GaN ICs combine the highest dV/dt
Product Reliability
immunity, high-speed integrated drive and thermally optimized, • 20-year limited warranty low-inductance, QFN packaging to enable designers to achieve simple, quick, and reliable solutions. Navitas’ GaN IC
2. Topologies / Applications
technology extends the capabilities of traditional topologies such as active clamp flyback, half-bridge, buck/boost, LLC and • AC-DC, DC-DC other resonant converters to reach MHz+ frequencies with very • ACF, buck, boost, half bridge, full bridge, LLC, AHB, high efficiencies and low EMI to achieve unprecedented power Class D, PFC, Motor Drive densities at a very attractive cost structure.
4. Typical Application Circuits
Motor inverter LLC
Final Datasheet 1 Rev Apr. 29, 2025