TARGET NV6257Electrical Characteristics (cont.)Typical conditions: V= 400 V, V= 15 V, F= 1 MHz, T= 25 ºC, I= 1.5 A, DZ= 6.2 VINCCSWAMBOUTL,H(unless otherwise specified)SYMPARAMETERMINTYPMAXUNITSCONDITIONSVB Supply Characteristics V UVLO Rising Turn-On VB B 9.0 V DZ = 6.2 V UV+ Threshold (V – V ) H B SW V UVLO Falling Turn-Off VB B 8.5 V DZ = 6.2 V UV- Threshold (V – V ) H B SW VB V UVLO Hysteresis 0.5 V HYS B V = 0 V, V = 0 V, V = I V Quiescent Current 3 mA INH INL SW QVB B 0 V, V = 12 V, D = 6.2 V B ZH Switching Characteristics F Switching Frequency 2 MHz SW t Pulse width 0.02 100 us High side, no low side min PW Bootstrap FET Characteristics V = 12 V, V = 0 V, I Bootstrap Charging Current 350 mA CC B BOOT V = 0 V SW Enable Input Characteristics IC Enable Rising Turn-on V 4 V EN+ Threshold IC Enable Falling Turn-off V 1 V EN- Threshold V IC Enable Hysteresis 0.5 V EN_HYS Revised 8-1-18 Navitas Semiconductor Confidential Page 5