Datasheet 2SAR586J (Rohm) - 2
| 制造商 | Rohm |
| 描述 | PNP -5.0A -80V Power Transistor |
| 页数 / 页 | 9 / 2 — 2SAR586J. Absolute maximum ratings. Electrical characteristics. 20190423 … |
| 文件格式/大小 | PDF / 1.5 Mb |
| 文件语言 | 英语 |
2SAR586J. Absolute maximum ratings. Electrical characteristics. 20190423 - Rev.001
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2SAR586J
Datasheet l
Absolute maximum ratings
(Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -6 V IC -5 A Collector current I *1 CP -10 A Power dissipation P *2 D 40 W Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -100μA -80 - - V Collector-emitter breakdown BV voltage CEO IC = -1mA -80 - - V Emitter-base breakdown voltage BVEBO IE = -100μA -6 - - V Collector cut-off current ICBO VCB = -80V - - -1 μA Emitter cut-off current IEBO VEB = -4V - - -1 μA Col ector-emitter saturation voltage V *3 CE(sat) IC = -2A, IB = -100mA - -160 -320 mV DC current gain h *3 FE VCE = -3V, IC = -500mA 120 - 390 - V Transition frequency CE = -10V, IE = 500mA, f *3 T - 200 - MHz f = 100MHz V Output capacitance C CB = -10V, IE = 0A, ob - 100 - pF f = 1MHz Turn-On time ton IC = -2.5A, - 40 - ns IB1 = -250mA, IB2 = 250mA, Storage time tstg - 350 - ns VCC ⋍ -10V, RL = 3.9Ω Fall time tf See test circuit - 80 - ns *1 Pw=10ms Single Pulse *2 Tc=25℃ *3 Pulsed www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/6
20190423 - Rev.001
Datasheet l
Absolute maximum ratings
(Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -6 V IC -5 A Collector current I *1 CP -10 A Power dissipation P *2 D 40 W Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -100μA -80 - - V Collector-emitter breakdown BV voltage CEO IC = -1mA -80 - - V Emitter-base breakdown voltage BVEBO IE = -100μA -6 - - V Collector cut-off current ICBO VCB = -80V - - -1 μA Emitter cut-off current IEBO VEB = -4V - - -1 μA Col ector-emitter saturation voltage V *3 CE(sat) IC = -2A, IB = -100mA - -160 -320 mV DC current gain h *3 FE VCE = -3V, IC = -500mA 120 - 390 - V Transition frequency CE = -10V, IE = 500mA, f *3 T - 200 - MHz f = 100MHz V Output capacitance C CB = -10V, IE = 0A, ob - 100 - pF f = 1MHz Turn-On time ton IC = -2.5A, - 40 - ns IB1 = -250mA, IB2 = 250mA, Storage time tstg - 350 - ns VCC ⋍ -10V, RL = 3.9Ω Fall time tf See test circuit - 80 - ns *1 Pw=10ms Single Pulse *2 Tc=25℃ *3 Pulsed www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/6
20190423 - Rev.001