Datasheet RB751V40T1G (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Schottky Barrier Diode |
| 页数 / 页 | 5 / 2 — RB751V40T1G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. … |
| 文件格式/大小 | PDF / 123 Kb |
| 文件语言 | 英语 |
RB751V40T1G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. Figure 1. Recovery Time Equivalent Test Circuit
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RB751V40T1G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 30 − − Volts (IR = 10 μA) Total Capacitance CT − 2.0 2.5 pF (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage IR − 300 500 nAdc (VR = 30 V) Forward Voltage VF − 0.28 0.37 Vdc (IF = 1.0 mAdc) 820 Ω +10 V 2 k 0.1 μF IF 100 μH IF tr tp t 0.1 μF trr t 10% DUT 50 Ω OUTPUT 50 Ω INPUT PULSE SAMPLING 90% iR(REC) = 1 mA I GENERATOR OSCILLOSCOPE R V OUTPUT PULSE R (IF = IR = 10 mA; measured INPUT SIGNAL at iR(REC) = 1 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 30 − − Volts (IR = 10 μA) Total Capacitance CT − 2.0 2.5 pF (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage IR − 300 500 nAdc (VR = 30 V) Forward Voltage VF − 0.28 0.37 Vdc (IF = 1.0 mAdc) 820 Ω +10 V 2 k 0.1 μF IF 100 μH IF tr tp t 0.1 μF trr t 10% DUT 50 Ω OUTPUT 50 Ω INPUT PULSE SAMPLING 90% iR(REC) = 1 mA I GENERATOR OSCILLOSCOPE R V OUTPUT PULSE R (IF = IR = 10 mA; measured INPUT SIGNAL at iR(REC) = 1 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2