Datasheet FZT788B (Diodes) - 4
| 制造商 | Diodes |
| 描述 | 15V PNP Medium Power High Gain Transistor In SOT223 |
| 页数 / 页 | 7 / 4 — FZT788B. Electrical Characteristics. Characteristic. Symbol. Min. Typ. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
FZT788B. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. www.diodes.com
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FZT788B Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -15 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 11) BVCEO -15 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 — — V IE = -100µA Collector-Base Cut-Off Current ICBO — — -100 nA VCB = -10V Emitter Cut-Off Current IEBO — — -100 nA VEB = -4V 500 — — IC = -10mA, VCE = -2V 400 — — IC = -1A, VCE = -2V DC Current Gain (Note 11) hFE — 300 — — IC = -2A, VCE = -2V 150 — — IC = -6A, VCE = -2V — — -0.15 IC = -0.5A, IB = -2.5mA — — -0.25 IC = -1A, IB = -5mA Collector-Emitter Saturation Voltage (Note 11) VCE(sat) — V — -0.45 IC = -2A, IB = -10mA — — -0.5 IC =- 3A, IB = -50mA Base-Emitter Saturation Voltage (Note 11) VBE(sat) — — -0.9 V IC = -1A, IB = -5mA Base-Emitter Turn-On Voltage (Note 11) VBE(on) — -0.75 — V IC = -1A, VCE = -2V Input Capacitance Cibo — 225 — pF VEB = -0.5V, f = 1MHz Output Capacitance Cobo — 25 — pF VCB = -10V, f = 1MHz V Current Gain-Bandwidth Product f CE = -5V, IC = -50mA, T 100 — — MHz f=50MHz Turn-On Time ton — 35 — ns VCC = -10V, IC = -500mA Turn-Off Time t I off — 400 — ns B1 = -IB2 = -50mA Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%. FZT788B 4 of 7 March 2022 Document number: DS33167 Rev. 5 - 2
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(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -15 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 11) BVCEO -15 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 — — V IE = -100µA Collector-Base Cut-Off Current ICBO — — -100 nA VCB = -10V Emitter Cut-Off Current IEBO — — -100 nA VEB = -4V 500 — — IC = -10mA, VCE = -2V 400 — — IC = -1A, VCE = -2V DC Current Gain (Note 11) hFE — 300 — — IC = -2A, VCE = -2V 150 — — IC = -6A, VCE = -2V — — -0.15 IC = -0.5A, IB = -2.5mA — — -0.25 IC = -1A, IB = -5mA Collector-Emitter Saturation Voltage (Note 11) VCE(sat) — V — -0.45 IC = -2A, IB = -10mA — — -0.5 IC =- 3A, IB = -50mA Base-Emitter Saturation Voltage (Note 11) VBE(sat) — — -0.9 V IC = -1A, IB = -5mA Base-Emitter Turn-On Voltage (Note 11) VBE(on) — -0.75 — V IC = -1A, VCE = -2V Input Capacitance Cibo — 225 — pF VEB = -0.5V, f = 1MHz Output Capacitance Cobo — 25 — pF VCB = -10V, f = 1MHz V Current Gain-Bandwidth Product f CE = -5V, IC = -50mA, T 100 — — MHz f=50MHz Turn-On Time ton — 35 — ns VCC = -10V, IC = -500mA Turn-Off Time t I off — 400 — ns B1 = -IB2 = -50mA Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%. FZT788B 4 of 7 March 2022 Document number: DS33167 Rev. 5 - 2
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© Diodes Incorporated