数据表 Datasheet BD242, BD242A, BD242B, …
Datasheet BD242, BD242A, BD242B, BD242C (Fairchild) 制造商 Fairchild 描述 PNP Epitaxial Silicon Transistor 页数 / 页 3 / 1 — BD242/. A/B/. BD242/A/B/C. Medium Power Linear and Switching … 文件格式/大小 PDF / 32 Kb 文件语言 英语
BD242/. A/B/. BD242/A/B/C. Medium Power Linear and Switching Applications. PNP Epitaxial Silicon Transistor
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该数据表的模型线 文件文字版本 BD242/ A/B/ BD242/A/B/C C Medium Power Linear and Switching Applications • Complement to BD241/A/B/C respectively 1 TO-220 1.Base 2.Collector 3.EmitterPNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise notedSymbol Parameter Value Units VCEO Collector-Emitter Voltage : BD242 - 45 V : BD242A - 60 V : BD242B - 80 V : BD242C - 100 V VCER Collector-Emitter Voltage : BD242 - 55 V : BD242A - 70 V : BD242B - 90 V : BD242C - 115 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 3 A ICP *Collector Current (Pulse) - 5 A IB Base Current - 1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °CElectrical Characteristics TC=25°C unless otherwise notedSymbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD242 IC = - 30mA, IB = 0 - 45 V : BD242A - 60 V : BD242B - 80 V : BD242C - 100 V ICEO Collector Cut-off Current : BD242/A VCE = - 30V, IB = 0 - 0.3 mA : BD242B/C VCE = - 60V, IB = 0 - 0.3 mA ICES Collector Cut-off Current : BD242 VCE = - 45V, VBE = 0 - 0.2 mA : BD242A VCE = - 60V, VBE = 0 - 0.2 mA : BD242B VCE = - 80V, VBE = 0 - 0.2 mA : BD242C VCE = - 100V, VBE = 0 - 0.2 mA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 1 mA hFE * DC Current Gain VCE = - 4V, IC = - 1A 25 VCE = - 4V, IC = - 3A 10 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 3A, IB = - 0.6A - 1.2 V VBE(on) * Base-Emitter ON Voltage VCE = - 4V, IC = - 3A - 1.8 V * Pulse Test: PW=300µs, duty Cycle≤2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000