Datasheet BSS123 (ON Semiconductor) - 4

BSS123 TYPICAL CHARACTERISTICS
(continued) 2.2 3.4 2.0 I I D = 170 mA D = 0.08 A VGS = 10 V
W)
3.0 1.8 1.6 2.6
−Resistance
T 1.4 A = 125°C
−Resistance (
2.2
, Normalized
1.2 1.0
, On
1.8
DS(on)R −Source On
0.8
DS(on)
T
R
A = 25°C
Drain
1.4 0.6 0.4 1.0 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10
TJ, Junction Temperature (
5
C) VGS, Gate To Source Voltage (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance Variation with Gate−to−Source Voltage
1.0 1 VDS = 10 V VGS = 0 V 0.8 0.1 TA = 125°C 0.6 0.01 0.4
, Drain Current (A)
25°C
I D
TA = 125°C 0.001 0.2
, Reverse Drain Current (A) I S
−55°C −55 25 °C °C 0 0.0001 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 1.2
VGS, Gate To Source Voltage (V) VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
10 100 ID = 0.17 A f = 1 MHz VDS = 30 V VGS = 0 V 8 80 50 V Ciss
oltage (V)
6 60 70 V
−Source V
4 40
Capacitance (pF) , Gate
Crss 2 20
V GS
Coss 0 0 0 0.4 0.8 1.2 1.6 2 0 20 40 60 80 100
Qg, Gate Charge (nC) VSD, Drain To Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics www.onsemi.com 4