Datasheet BAV74LT1G (ON Semiconductor) - 2

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BAV74LT1G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
(EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Reverse Breakdown Voltage V(BR) 50 − Vdc (I(BR) = 5.0 mAdc) Reverse Voltage Leakage Current, (Note 3) IR mAdc (VR = 50 Vdc, TJ = 125°C) − 100 (VR = 50 Vdc) − 0.1 Diode Capacitance CD − 2.0 pF (VR = 0, f = 1.0 MHz) Forward Voltage VF − 1.0 Vdc (IF = 100 mAdc) Reverse Recovery Time trr − 4.0 ns (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 W) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. For each individual diode while the second diode is unbiased.
CURVES APPLICABLE TO EACH ANODE
100 10 TA = 150°C TA = 85°C μA) TA = 125°C ( 1.0 (mA) 10 TA = -40°C TA = 85°C 0.1 ARD CURRENT W 1.0 T T A = 55°C A = 25°C , REVERSE CURRENT , FOR I R 0.01 I F TA = 25°C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage Figure 2. Leakage Current
1.0 0.9 ANCE (pF) ACIT 0.8 , DIODE CAP 0.7 DC 0.6 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance www.onsemi.com 2