Datasheet ADG858 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | 0.58 Ω CMOS, 1.8 V to 5.5 V, Quad SPDT/2:1 Mux in Mini LFCSP |
| 页数 / 页 | 16 / 3 — Data Sheet. ADG858. SPECIFICATIONS. Table 1. Parameter. +25°C −40°C to … |
| 修订版 | B |
| 文件格式/大小 | PDF / 305 Kb |
| 文件语言 | 英语 |
Data Sheet. ADG858. SPECIFICATIONS. Table 1. Parameter. +25°C −40°C to +85°C. Unit. Test Conditions/Comments
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Data Sheet ADG858 SPECIFICATIONS
VDD = 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1. Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 to VDD V On Resistance, RON 0.58 Ω typ VDD = 4.2 V, VS = 0 V to VDD, IS = 100 mA, see Figure 16 0.72 0.82 Ω max On-Resistance Match Between Channels, ΔRON 0.04 Ω typ VDD = 4.2 V, VS = 2 V, IS = 100 mA 0.14 Ω max On-Resistance Flatness, RFLAT (ON) 0.12 Ω typ VDD = 4.2 V, VS = 0 V to VDD 0.26 Ω max IS = 100 mA LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off) ±10 pA typ VS = 0.6 V/4.2 V, VD = 4.2 V/0.6 V, see Figure 17 Channel On Leakage, ID, IS (On) ±10 pA typ VS = VD = 0.6 V or 4.2 V, see Figure 18 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.004 µA typ VIN = VGND or VDD 0.05 µA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS1 tON 20 ns typ RL = 50 Ω, CL = 35 pF 27 36 ns max VS = 3 V/0 V, see Figure 19 tOFF 8 ns typ RL = 50 Ω, CL = 35 pF 12 13 ns max VS = 3 V, see Figure 19 Break-Before-Make Time Delay, tBBM 14 ns typ RL = 50 Ω, CL = 35 pF 9 ns min VS1 = VS2 = 1.5 V, see Figure 20 Charge Injection 45 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF, see Figure 21 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 22 Channel-to-Channel Crosstalk −85 dB typ S1A to S2A/S1B to S2B/S3A to S4A/S3B to S4B, RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 25 −67 dB typ S1A to S1B/S2A to S2B/S3A to S3B/S4A to S4B, RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 24 Total Harmonic Distortion, THD + N 0.06 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p Insertion Loss −0.05 dB typ RL = 50 Ω, CL = 5 pF, see Figure 23 −3 dB Bandwidth 70 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23 CS (Off) 25 pF typ CD, CS (On) 75 pF typ POWER REQUIREMENTS VDD = 5.5 V IDD 0.003 µA typ Digital inputs = 0 V or 5.5 V 1 µA max 1 Guaranteed by design, not subject to production test. Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISTION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE
Data Sheet ADG858 SPECIFICATIONS
VDD = 4.2 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1. Parameter +25°C −40°C to +85°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 to VDD V On Resistance, RON 0.58 Ω typ VDD = 4.2 V, VS = 0 V to VDD, IS = 100 mA, see Figure 16 0.72 0.82 Ω max On-Resistance Match Between Channels, ΔRON 0.04 Ω typ VDD = 4.2 V, VS = 2 V, IS = 100 mA 0.14 Ω max On-Resistance Flatness, RFLAT (ON) 0.12 Ω typ VDD = 4.2 V, VS = 0 V to VDD 0.26 Ω max IS = 100 mA LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off) ±10 pA typ VS = 0.6 V/4.2 V, VD = 4.2 V/0.6 V, see Figure 17 Channel On Leakage, ID, IS (On) ±10 pA typ VS = VD = 0.6 V or 4.2 V, see Figure 18 DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.004 µA typ VIN = VGND or VDD 0.05 µA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS1 tON 20 ns typ RL = 50 Ω, CL = 35 pF 27 36 ns max VS = 3 V/0 V, see Figure 19 tOFF 8 ns typ RL = 50 Ω, CL = 35 pF 12 13 ns max VS = 3 V, see Figure 19 Break-Before-Make Time Delay, tBBM 14 ns typ RL = 50 Ω, CL = 35 pF 9 ns min VS1 = VS2 = 1.5 V, see Figure 20 Charge Injection 45 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF, see Figure 21 Off Isolation −67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 22 Channel-to-Channel Crosstalk −85 dB typ S1A to S2A/S1B to S2B/S3A to S4A/S3B to S4B, RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 25 −67 dB typ S1A to S1B/S2A to S2B/S3A to S3B/S4A to S4B, RL = 50 Ω, CL = 5 pF, f = 100 kHz, see Figure 24 Total Harmonic Distortion, THD + N 0.06 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p Insertion Loss −0.05 dB typ RL = 50 Ω, CL = 5 pF, see Figure 23 −3 dB Bandwidth 70 MHz typ RL = 50 Ω, CL = 5 pF, see Figure 23 CS (Off) 25 pF typ CD, CS (On) 75 pF typ POWER REQUIREMENTS VDD = 5.5 V IDD 0.003 µA typ Digital inputs = 0 V or 5.5 V 1 µA max 1 Guaranteed by design, not subject to production test. Rev. B | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISTION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE