Datasheet ADG1219 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS SPDT in SOT-23 |
| 页数 / 页 | 16 / 3 — ADG1219. SPECIFICATIONS DUAL SUPPLY. Table 1. B. Version. Parameters. … |
| 修订版 | A |
| 文件格式/大小 | PDF / 391 Kb |
| 文件语言 | 英语 |
ADG1219. SPECIFICATIONS DUAL SUPPLY. Table 1. B. Version. Parameters. 25°C. −40°C to +85°C. −40°C to +125°C. Unit
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ADG1219 SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. B Version 1 Parameters 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 23 200 240 270 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA Channels, ∆RON 6 10 12 Ω max On Resistance Flatness, RFLAT(ON) 20 Ω typ VS = −5 V, 0 V, +5 V; IS = −1 mA 64 76 84 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.004 nA typ VS = ±10 V, VS = ±10 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.009 nA typ VS = ±10 V, VS = ±10 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; see Figure 25 ±0.2 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS2 Transition Time, tTRANSITION 140 ns typ RL = 300 Ω, CL = 35 pF 170 200 230 ns max VS = 10 V; see Figure 30 tON (EN) 85 ns typ RL = 300 Ω, CL = 35 pF 105 130 140 ns max VS = 10 V; see Figure 30 tOFF (EN) 105 ns typ RL = 300 Ω, CL = 35 pF 125 150 170 ns max VS = 10 V; see Figure 30 Break-Before-Make Time Delay, tBBM 40 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 10 V; see Figure 31 Charge Injection 0.1 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 77 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz −3 dB Bandwidth 520 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 28 CS (Off) 2.5 pF typ f = 1 MHz; VS = 0 V 3.3 pF max f = 1 MHz; VS = 0 V CD (Off) 4.3 pF typ f = 1 MHz; VS = 0 V 5.1 pF max f = 1 MHz; VS = 0 V CD, CS (On) 7.5 pF typ f = 1 MHz; VS = 0 V 10 pF max f = 1 MHz; VS = 0 V Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE
ADG1219 SPECIFICATIONS DUAL SUPPLY
VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. B Version 1 Parameters 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 120 Ω typ VS = ±10 V, IS = −1 mA; see Figure 23 200 240 270 Ω max VDD = +13.5 V, VSS = −13.5 V On Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA Channels, ∆RON 6 10 12 Ω max On Resistance Flatness, RFLAT(ON) 20 Ω typ VS = −5 V, 0 V, +5 V; IS = −1 mA 64 76 84 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.004 nA typ VS = ±10 V, VS = ±10 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Drain Off Leakage, ID (Off) ±0.009 nA typ VS = ±10 V, VS = ±10 V; see Figure 24 ±0.1 ±0.6 ±1 nA max Channel On Leakage, ID, IS (On) ±0.02 nA typ VS = VD = ±10 V; see Figure 25 ±0.2 ±0.6 ±1 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS2 Transition Time, tTRANSITION 140 ns typ RL = 300 Ω, CL = 35 pF 170 200 230 ns max VS = 10 V; see Figure 30 tON (EN) 85 ns typ RL = 300 Ω, CL = 35 pF 105 130 140 ns max VS = 10 V; see Figure 30 tOFF (EN) 105 ns typ RL = 300 Ω, CL = 35 pF 125 150 170 ns max VS = 10 V; see Figure 30 Break-Before-Make Time Delay, tBBM 40 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 10 V; see Figure 31 Charge Injection 0.1 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32 Off Isolation 77 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 26 Channel-to-Channel Crosstalk 80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Total Harmonic Distortion + Noise 0.15 % typ RL = 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz −3 dB Bandwidth 520 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 28 CS (Off) 2.5 pF typ f = 1 MHz; VS = 0 V 3.3 pF max f = 1 MHz; VS = 0 V CD (Off) 4.3 pF typ f = 1 MHz; VS = 0 V 5.1 pF max f = 1 MHz; VS = 0 V CD, CS (On) 7.5 pF typ f = 1 MHz; VS = 0 V 10 pF max f = 1 MHz; VS = 0 V Rev. A | Page 3 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE