Datasheet ZVN2106A (Diodes) - 3
| 制造商 | Diodes |
| 描述 | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 页数 / 页 | 3 / 3 — ZVN2106A. TYPICAL CHARACTERISTICS. Transconductance v gate-source … |
| 文件格式/大小 | PDF / 51 Kb |
| 文件语言 | 英语 |
ZVN2106A. TYPICAL CHARACTERISTICS. Transconductance v gate-source voltage. Capacitance v drain-source voltage
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ZVN2106A TYPICAL CHARACTERISTICS
0.7 100 0.6 80 0.5 pF) ( 0.4 V 60 DS=10V nce Ciss 0.3 ita c 40 pa 0.2 Ca 20 Coss ransconductance (S) 0.1 C- -T Crss sf g 0 0 10 20 30 40 50 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts)
Transconductance v gate-source voltage Capacitance v drain-source voltage
VDD= 20V 30V 50V 16 olts) 14 ID=3A V ( 12 ge tal 10 o 8 ce V 6 ur So 4 te 2 Ga- GS 0 V 0 0.5 1.0 1.5 2.0 2.5 3.0 Q-Charge (nC)
Gate charge v gate-source voltage
3-363
0.7 100 0.6 80 0.5 pF) ( 0.4 V 60 DS=10V nce Ciss 0.3 ita c 40 pa 0.2 Ca 20 Coss ransconductance (S) 0.1 C- -T Crss sf g 0 0 10 20 30 40 50 0 2 4 6 8 10 VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts)
Transconductance v gate-source voltage Capacitance v drain-source voltage
VDD= 20V 30V 50V 16 olts) 14 ID=3A V ( 12 ge tal 10 o 8 ce V 6 ur So 4 te 2 Ga- GS 0 V 0 0.5 1.0 1.5 2.0 2.5 3.0 Q-Charge (nC)
Gate charge v gate-source voltage
3-363