Datasheet CBRHD (Central Semiconductor)

制造商Central Semiconductor
描述SURFACE MOUNT SILICON HIGH DENSITY 0.5 AMP BRIDGE RECTIFIER
页数 / 页3 / 1 — CBRHD SERIES. SURFACE MOUNT SILICON. www.centra lsemi.com. HIGH DENSITY. …
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CBRHD SERIES. SURFACE MOUNT SILICON. www.centra lsemi.com. HIGH DENSITY. 0.5 AMP. DESCRIPTION:. BRIDGE RECTIFIER. MARKING CODES:

Datasheet CBRHD Central Semiconductor

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CBRHD SERIES SURFACE MOUNT SILICON www.centra lsemi.com HIGH DENSITY 0.5 AMP DESCRIPTION: BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHD series devices are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODES: CBRHD-02: CBD2 CBRHD-04: CBD4 CBRHD-06: CBD6 CBRHD-10: CBD10 HD DIP CASE FEATURES: •
Efficient use of board space: requires only 42mm2 of

50% higher density (Amps/mm2) than the industry board space vs. 120mm2 of board space needed for standard 1.0 Amp surface mount bridge rectifier. industry standard 1.0 Amp surface mount bridge rectifier.

Glass passivated chips for high reliability.
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRHD SYMBOL -02 -04 -06 -10* UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 1000 V DC Blocking Voltage VR 200 400 600 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 700 V Average Forward Current (TA=40°C) (Note 1) IO 0.5 A Average Forward Current (TA=40°C) (Note 2) IO 0.8 A Peak Forward Surge Current IFSM 30 A Operating & Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 5.0 µA IR VR=Rated VRRM, TA=125°C 500 µA VF IF=400mA 1.0 V CJ VR=4.0V, f=1.0MHz 20 pF Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. * Available on special order, please consult factory. R6 (19-August 2020)