Datasheet IRLZ44 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 9 / 2 — IRLZ44. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| 文件格式/大小 | PDF / 901 Kb |
| 文件语言 | 英语 |
IRLZ44. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static. Dynamic
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文件文字版本
IRLZ44
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-source leakage IGSS VGS = 10 V - - ± 100 nA VDS = 60 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 VGS = 5.0 V ID = 31 A b - - 0.028 Drain-source on-state resistance RDS(on) Ω VGS = 4.0 V ID = 25 A b - - 0.039 Forward transconductance gfs VDS = 25 V, ID = 31 A b 23 - - S
Dynamic
Input capacitance Ciss - 3300 - VGS = 0 V, Output capacitance Coss VDS = 25 V, - 1200 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 200 - Total gate charge Qg - - 66 I Gate-source charge Qgs V D = 51 A, VDS = 48 V, GS = 5.0 V - - 12 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 43 Turn-on delay time td(on) - 17 - Rise time tr V - 230 - DD = 30 V, ID = 51 A, ns Rg = 4.6 Ω, RD = 0.56 Ω, see fig. 10 b Turn-off delay time td(off) - 42 - Fall time tf - 110 - Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal source inductance LS die contact - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous source-drain diode current I D S - - 50c showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode - - 200 S Body diode voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 130 180 ns TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.84 1.3 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Current limited by the package, (die current = 51 A) S21-1045-Rev. D, 25-Oct-2021
2
Document Number: 91328 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - °C/W Maximum junction-to-case (drain) RthJC - 1.0
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V Gate-source leakage IGSS VGS = 10 V - - ± 100 nA VDS = 60 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 VGS = 5.0 V ID = 31 A b - - 0.028 Drain-source on-state resistance RDS(on) Ω VGS = 4.0 V ID = 25 A b - - 0.039 Forward transconductance gfs VDS = 25 V, ID = 31 A b 23 - - S
Dynamic
Input capacitance Ciss - 3300 - VGS = 0 V, Output capacitance Coss VDS = 25 V, - 1200 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 200 - Total gate charge Qg - - 66 I Gate-source charge Qgs V D = 51 A, VDS = 48 V, GS = 5.0 V - - 12 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 43 Turn-on delay time td(on) - 17 - Rise time tr V - 230 - DD = 30 V, ID = 51 A, ns Rg = 4.6 Ω, RD = 0.56 Ω, see fig. 10 b Turn-off delay time td(off) - 42 - Fall time tf - 110 - Between lead, D Internal drain inductance LD - 4.5 - 6 mm (0.25") from package and center of nH G Internal source inductance LS die contact - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous source-drain diode current I D S - - 50c showing the A integral reverse G Pulsed diode forward current a ISM p - n junction diode - - 200 S Body diode voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 130 180 ns TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.84 1.3 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % c. Current limited by the package, (die current = 51 A) S21-1045-Rev. D, 25-Oct-2021
2
Document Number: 91328 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000