Datasheet AO3400 (Alpha & Omega) - 2
| 制造商 | Alpha & Omega |
| 描述 | 30V N-Channel MOSFET |
| 页数 / 页 | 5 / 2 — AO3400. Electrical Characteristics (TJ=25°C unless otherwise noted). … |
| 文件格式/大小 | PDF / 484 Kb |
| 文件语言 | 英语 |
AO3400. Electrical Characteristics (TJ=25°C unless otherwise noted). Symbol. Parameter. Conditions. Min. Typ. Max. Units
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AO3400 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV I DSS Drain-Source Breakdown Voltage D=250µA, VGS=0V 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current µA TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.65 1.05 1.45 V I V D(ON) On state drain current GS=4.5V, VDS=5V 30 A VGS=10V, ID=5.8A 18 28 mΩ TJ=125°C 28 39 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A 19 33 mΩ VGS=2.5V, ID=4A 24 52 mΩ g V FS Forward Transconductance DS=5V, ID=5.8A 33 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 630 pF C Output Capacitance V oss GS=0V, VDS=15V, f=1MHz 75 pF Crss Reverse Transfer Capacitance 50 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3 4.5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6 7 nC Q Gate Source Charge V gs GS=4.5V, VDS=15V, ID=5.8A 1.3 nC Qgd Gate Drain Charge 1.8 nC tD(on) Turn-On DelayTime 3 ns t Tu T r u n- n On O n Ri R se e Ti T me r m V =10V, V =15V, R =2.6 GS=10V, VDS=15V, RL=2. Ω 6 , 2. 2 5 ns n t R D(off) Turn-Off DelayTime GEN=3Ω 25 ns tf Turn-Off Fall Time 4 ns trr IF=5.8A, dI/dt=100A/µs Body Diode Reverse Recovery Time 8.5 ns Qrr Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs 2.6 nC A. The value of Rθ is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A ° value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) ° ≤ C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) ° initialT =25 C. J ° D. The Rθ is the sum of the thermal impedence from junction to lead R and lead to ambient. JA θJL E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) ° THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 8: Dec 2011
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BV I DSS Drain-Source Breakdown Voltage D=250µA, VGS=0V 30 V VDS=30V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current µA TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.65 1.05 1.45 V I V D(ON) On state drain current GS=4.5V, VDS=5V 30 A VGS=10V, ID=5.8A 18 28 mΩ TJ=125°C 28 39 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A 19 33 mΩ VGS=2.5V, ID=4A 24 52 mΩ g V FS Forward Transconductance DS=5V, ID=5.8A 33 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 630 pF C Output Capacitance V oss GS=0V, VDS=15V, f=1MHz 75 pF Crss Reverse Transfer Capacitance 50 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.5 3 4.5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 6 7 nC Q Gate Source Charge V gs GS=4.5V, VDS=15V, ID=5.8A 1.3 nC Qgd Gate Drain Charge 1.8 nC tD(on) Turn-On DelayTime 3 ns t Tu T r u n- n On O n Ri R se e Ti T me r m V =10V, V =15V, R =2.6 GS=10V, VDS=15V, RL=2. Ω 6 , 2. 2 5 ns n t R D(off) Turn-Off DelayTime GEN=3Ω 25 ns tf Turn-Off Fall Time 4 ns trr IF=5.8A, dI/dt=100A/µs Body Diode Reverse Recovery Time 8.5 ns Qrr Body Diode Reverse Recovery Charge IF=5.8A, dI/dt=100A/µs 2.6 nC A. The value of Rθ is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A ° value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) ° ≤ C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) ° initialT =25 C. J ° D. The Rθ is the sum of the thermal impedence from junction to lead R and lead to ambient. JA θJL E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) ° THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 8: Dec 2011
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Page 2 of 5