Datasheet 1EDBx275F (Infineon) - 20

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EiceDRIVER™ 1EDBx275F Single-channel isolated gate-driver ICs in 150 mil DSO package Application notes 6 Application notes
Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. Due to the input-to-output isolation, EiceDRIVER™ 1EDBx275F is best suited for use as high-side driver. In particular, the combination with
EiceDRIVER™ 1EDNx550B
(single-channel gate driver with true differential inputs), is best suited for half-bridge driving due to perfect matching in timing performances and output capability. By making use of the drivers inverting and non-inverting inputs, shoot-through protection can be implemented as depicted in
Figure 12
; any undesired overlap of low-side and high-side PWM signals is not propagated at the transistors input. This solution is preferable compared to dual-channel gate drivers in case of high-power or high-frequency designs; here minimizing the gate loop may become a critical requirement that can be more easily fulfilled by using single-channel solutions. Controller VBUS EiceDRIVER™ 1EDBx275F VDD VDD VDDI VDDO Rgon PWM1 IN+ OUT_SRC CVDDI Rgoff Q1 IN- OUT_SNK Cboot GND GNDI GNDO Dboot Rboot EiceDRIVER™ 1EDNx550B Rin1 PWM2 IN+ VDD R R in2 gon IN- OUT_SRC Rgoff Q2 GND OUT_SNK CVDDO Rc
Figure 12 Typical application circuit for half-bridge driving
The high CMTI of 300 V/ns, in conjunction with the ability to drive 4-pin Kelvin source transistors, makes the combination 1EDBx275F, 1EDNx550B ideal to drive GaN and SiC power switches.
6.1 Driving 600 V CoolGaNTM Figure 13
depicts a 1EDB7275F typical use case driving Infineon´s 600V GaN power switches (CoolGaNTM). The example shows a soft-switching topology; here, due to acceptable switching speed, unipolar driving is possible without risk of false triggering of the devices due to switching induced overshoots. Details of component dimensioning can be found in the
EiceDRIVER™ 1EDi-GaN
product family datasheet. Final Data Sheet 20 Rev. 2.1 2021-04-21 Document Outline Description Table of Contents 1 Pin configuration and description 2 Functional description 2.1 Block diagram 2.2 Power supply and Undervoltage Lockout (UVLO) 2.2.1 Input supply voltage 2.2.2 Output supply voltage 2.2.3 Input stage 2.3 Driver output 2.4 Output active clamping 2.5 CT communication and input to output data transmission 3 Electrical characteristics and parameters 3.1 Absolute maximum ratings 3.2 Thermal characteristics 3.3 Operating range 3.4 Electrical characteristics 3.5 Isolation specifications 4 Timing diagrams 5 Layout recommendation 6 Application notes 6.1 Driving 600 V CoolGaNTM 6.2 Driving 650 V CoolSiCTM 7 Typical characteristics 8 Package outline dimensions 8.1 Device numbers and markings 8.2 Package PG-DSO-8 Revision history