Datasheet HPR-1100BGH (Excelitas) - 3

HPR Series – HPR-1100BGH Hybrid PIN Receiver Module Table 5: Photodiode Specifications Parameter Symbol Minimum Typical Maximum Units
Peak Unity Responsivity
1
RPD 0.6 A/W Bandwidth
2
f3dB 1100 Hz Rise Time / Fall Time
3
tr / tf 32 µs Dark Noise
4
VN 4.0 µV/√Hz Noise Equivalent Power
2,5
NEP 0.03 pW/√Hz α 1 Field of View
6
Degrees α' 104
Note 1:
Unity Responsivity is defined as the intrinsic Responsivity of the Photodiode. The final Responsivity is dependent on the used feedback resistor and can be obtained by 𝑅(𝜆) = 𝑅𝑃𝐷(𝜆)𝑅𝐹 with R the final responsivity, RPD the unity responsivity and RF the feedback resistor value. Please refer also to Figure 2.
Note 2:
Operational performance with recommended feedback resistor of 200 MΩ, use of different feedback resistor values will modify system NEP and bandwidth.

0.35
Note 3:
As estimated by 𝑡𝑟/𝑓 =

𝑓3𝑑𝐵
Note 4:
Due to the natural fluctuations of charge carriers the PIN diode will also generate noise when not illuminated. Since the noise characteristics and hence the signal-to-noise ratio (SNR) are dependent on the bandwidth (f3dB) and operating wavelength (λ) inside the final system the illuminated noise 𝑉𝑖𝑙𝑙 = √2𝑞𝑓3𝑑𝐵𝑅(𝜆)𝑃 + 𝑉𝑁 needs to be considered. Hence the SNR is defined as 𝑉2 𝑝 (𝑅(𝜆)𝑃)2 𝑆𝑁𝑅 = = 𝑉2 2 𝑖𝑙𝑙 𝑉𝑖𝑙𝑙 with q the charge carrier and P the incident optical power in W. 𝑉
Note 5:
The NEP is specified in dark conditions and defined as

𝑁𝐸𝑃 = 𝑁

𝑅(𝜆)
Note 6:
Please refer to Figure 4

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