Datasheet C2M1000170J (Wolfspeed) - 5

制造商Wolfspeed
描述Silicon Carbide Power MOSFET 1700 V 5.3 A 1.0 Ω
页数 / 页10 / 5 — Typical Performance. Conditions:. GS = 0 V. J = -55 °C. TJ = 25 °C. tp …
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文件语言英语

Typical Performance. Conditions:. GS = 0 V. J = -55 °C. TJ = 25 °C. tp < 200 µs. GS = 5 V. VGS = 5 V. (A). nt, I DS. GS = 10 V. VGS = 10 V

Typical Performance Conditions: GS = 0 V J = -55 °C TJ = 25 °C tp < 200 µs GS = 5 V VGS = 5 V (A) nt, I DS GS = 10 V VGS = 10 V

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Typical Performance -5 -4 -3 -2 -1 0 -5 -4 -3 -2 -1 0 0 0 Conditions: V Conditions: V T GS = 0 V GS = 0 V J = -55 °C TJ = 25 °C tp < 200 µs V tp < 200 µs GS = 5 V -1 VGS = 5 V -1 (A) (A) V nt, I DS GS = 10 V -2 nt, I DS -2 VGS = 10 V VGS = 15 V VGS = 15 V -3 -3 VGS = 20 V in-Source Curre in-Source Curre Dra VGS = 20 V Dra -4 -4 -5 Drain-Source Voltage, V -5 DS (V) Drain-Source Voltage, VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
-5 -4 -3 -2 -1 0 8 0 Conditions: V T GS = 0 V 7 J = 150 °C VGS = 5 V tp < 200 µs -1 6 (A) V (µJ) GS = 10 V 5 nt, I DS V -2 GS = 15 V y, E OSS 4 VGS = 20 V d Energ 3 -3 in-Source Curre Store 2 Dra -4 1 0 -5 0 200 400 600 800 1000 1200 Drain-Source Voltage, VDS (V) Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC Figure 16. Output Capacitor Stored Energy
1000 1000 Conditions: Conditions: TJ = 25 °C TJ = 25 °C VAC = 25 mV VAC = 25 mV Ciss f = 1 MHz Ciss f = 1 MHz 100 100 Coss Coss Capacitance (pF) 10 Capacitance (pF) 10 Crss Crss 1 1 0 50 100 150 200 0 200 400 600 800 1000 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source Voltage (0-200 V) Voltage (0-1000 V)
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C2M1000170J Rev. B, 12-2017