Datasheet B2045G (Thinki Semiconductor)

制造商Thinki Semiconductor
描述20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers
页数 / 页2 / 1 — B2045G thru B20200G. Features. Applications. MAXIMUM RATINGS AND …
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B2045G thru B20200G. Features. Applications. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS. PARAMETER

Datasheet B2045G Thinki Semiconductor

该数据表的模型线

B20100G
B20150G
B20200G
B2045G
B2060G

文件文字版本

B2045G thru B20200G
B2045G thru B20200G Pb
Pb Free Plating Product 20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers D2PAK/TO-263AB Unit : inch (mm) ThinkiSemi Planar Schottky Technology ¬ ¬ Good Soft Recovery Characteris tics
Features
¬ Ideally Suited for Automatic Assembly ¬ Low Forward Voltage ¬ High Surge Current Capability ¬ Low Leakage Current ¬ Freewheeling, Snubber, Clamp ¬ Inversion Welder ¬ PFC
Applications
Plating Pow ¬ er Supply ¬ Ultrasonic Cleaner and Welder Case Case Case Case ¬ Converter & Chopper Positive Negative Doubler Series ¬ Tandem Polarity Tandem Polarity UPS/LED SMPS/HID Common Cathode Common Anode Suffix "G" Suffix "RG" Suffix "DG" Suffix "SG"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
PARAMETER SYMBOL B2045G B2060G B20100G B20150G B20200G Unit
Marking code B2045G B2060G B20100G B20150G B20200G Maximum repetitive peak reverse voltage VRRM 45 60 100 150 200 V Maximum RMS voltage VRMS 31 42 70 105 140 V Maximum DC blocking voltage VDC 45 60 100 150 200 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current IFRM 20 A (Rated VR, Square wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave IFSM 150 A superimposed on rated load Peak repetitive reverse surge current (Note 1) IRRM 1 0.5 A Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25°C VF 0.70 0.80 0.85 0.99 V IF=10A, TJ=125°C 0.60 0.70 0.75 0.87 Maximum reverse current @ rated VR T 0.1 J=25°C IR mA TJ=125°C 15 10 5 Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 1.5 2 °C/W Operating junction temperature range TJ - 55 to +150 °C Storage temperature range TSTG - 55 to +150 °C Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Rev.10T Page 1/2 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/