Datasheet HMC659 (Analog Devices) - 4
| 制造商 | Analog Devices |
| 描述 | GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz |
| 页数 / 页 | 8 / 4 — HMC659. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Power Compression … |
| 文件格式/大小 | PDF / 614 Kb |
| 文件语言 | 英语 |
HMC659. GaAs PHEMT MMIC. POWER AMPLIFIER, DC - 15 GHz. Power Compression @ 2 GHz. Power Compression @ 7 GHz
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HMC659
v02.0217
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Power Compression @ 2 GHz Power Compression @ 7 GHz
32 32 28 28 (%) (%) 24 24 IP PAE PAE H 20 20 (dB), (dB), 16 16 GAIN GAIN 12 12 R - C (dBm), 8 (dBm), Pout 8 Pout Gain Gain E Pout 4 PAE Pout 4 PAE W 0 0 O 0 3 6 9 12 15 0 3 6 9 12 15 INPUT POWER (dBm) INPUT POWER (dBm) R & P
Power Compression @ 15 GHz Power Dissipation
A 32 10 E 28 IN (%) Max Pdis @ 85C 8 2 GHz 24 (W) 12 GHz PAE 20 (dB), 6 S - L 16 GAIN R DISSIPATION 12 4 IE (dBm), 8 Pout POWER 2 Gain Pout 4 PAE LIF 0 0 P 0 3 6 9 12 15 -10 -6 -2 2 6 10 14 18 M INPUT POWER (dBm) INPUT POWER (dBm) A
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) 0 to -2 Vdc +7.5 299 Gate Bias Voltage (Vgg2) +2V to +4V +8.0 300 RF Input Power (RFIN)(Vdd = +12V) +20 dBm +8.5 301 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 3.69 W (derate 41 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 24.4 °C/W OBSERVE HANDLING PRECAUTIONS (channel to die bottom) Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ESD Sensitivity (HBM) Class1A, Passed 250V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v02.0217
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz Power Compression @ 2 GHz Power Compression @ 7 GHz
32 32 28 28 (%) (%) 24 24 IP PAE PAE H 20 20 (dB), (dB), 16 16 GAIN GAIN 12 12 R - C (dBm), 8 (dBm), Pout 8 Pout Gain Gain E Pout 4 PAE Pout 4 PAE W 0 0 O 0 3 6 9 12 15 0 3 6 9 12 15 INPUT POWER (dBm) INPUT POWER (dBm) R & P
Power Compression @ 15 GHz Power Dissipation
A 32 10 E 28 IN (%) Max Pdis @ 85C 8 2 GHz 24 (W) 12 GHz PAE 20 (dB), 6 S - L 16 GAIN R DISSIPATION 12 4 IE (dBm), 8 Pout POWER 2 Gain Pout 4 PAE LIF 0 0 P 0 3 6 9 12 15 -10 -6 -2 2 6 10 14 18 M INPUT POWER (dBm) INPUT POWER (dBm) A
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg1) 0 to -2 Vdc +7.5 299 Gate Bias Voltage (Vgg2) +2V to +4V +8.0 300 RF Input Power (RFIN)(Vdd = +12V) +20 dBm +8.5 301 Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) 3.69 W (derate 41 mW/°C above 85 °C) ELECTROSTATIC SENSITIVE DEVICE Thermal Resistance 24.4 °C/W OBSERVE HANDLING PRECAUTIONS (channel to die bottom) Storage Temperature -65 to 150°C Operating Temperature -55 to 85 °C ESD Sensitivity (HBM) Class1A, Passed 250V For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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