Datasheet HMC7357LP5GE (Analog Devices)

制造商Analog Devices
描述GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz
页数 / 页10 / 1 — HMC7357LP5GE. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 5.5 - 8.5 GHz. …
文件格式/大小PDF / 728 Kb
文件语言英语

HMC7357LP5GE. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 5.5 - 8.5 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC7357LP5GE Analog Devices

该数据表的模型线

文件文字版本

HMC7357LP5GE
v01.0918
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 5.5 - 8.5 GHz Typical Applications Features
The HMC7357LP5GE is ideal for: +35 dBm Pout @ 34% PAE T • Point-to-Point Radios High P1dB Output Power: +34 dBm M • Point-to-Multi-Point Radios High Output IP3: +41.5 dBm • VSAT & SATCOM High Gain: 29 dB R - S 50 Ohm Matched Input/Output E Supply Voltage: Vdd = +8V @ 1200 mA W 24-Lead 5x5 mm SMT Package O
Functional Diagram General Description
The HMC7357LP5GE is a three-stage GaAs pHEMT
C C C
R & P
gg1 dd1 dd2
MMIC Medium Power Amplifier that operates between
N/ V N/ V V N/
5.5 and 8.5 GHz. The amplifier provides 29 dB of gain A
24 23 22 21 20 19
and +35 dBm of saturated output power at 34% PAE E from a +8V supply. With an excel ent Output IP3 of IN +41.5 dBm, the HMC7357LP5GE is ideal for linear
N/C 1 18 N/C
applications such as high capacity point-to-point
GND 2 17 N/C
and point-to-multi-point radios or VSAT/SATCOM applications demanding +35 dBm of efficient saturated S - L
RFIN 3 16 RFOUT
output power. The RF I/Os are internal y matched R
N/C 4 15 GND
to 50 Ohms for ease of use. The HMC7357LP5GE IE is packaged in a leadless 5x5 mm plastic surface
N/C 5 1.5KΩ 1.5KΩ 14 N/C
mount package and is compatible with surface mount
N/C 6 13 N/C
manufacturing techniques. LIF P
7 8 9 1 PACKAGE
000 M
10 1 12 BASE
A
C C
00000-
/C gg2 N V N/ dd3V dd4V N/ GND Electrical Specifications, T = +25° C A Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = 8V, Idd = 1200 mA [1]
Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 5.5 - 7 7 - 8.5 GHz Gain 26.5 29.5 28 31 dB Gain Variation Over Temperature 0.0214 0.0234 dB/ °C Input Return Loss 14 14 dB Output Return Loss 22 15 dB Output Power for 1 dB Compression (P1dB) 31.5 34.5 31.5 34.5 dBm Saturated Output Power (Psat) 35 35 dBm Output Third Order Intercept (IP3)[2] 41.5 41.5 dBm Total Supply Current (Idd) 1200 1200 mA [1] Adjust Vgg between -2 to -0.4V to achieve Idd = 1200 mA typical. [2] Measurement taken at +8V @ 1200 mA, Pout / Tone = +20 dBm Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1
rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features General Description Functional Diagram Electrical Specifications Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature P1dB vs Supply Voltage Output IP3 vs. Supply Voltage, Pout/tone = +20 dBm Output IM3 @ Vdd = +6V Output IM3 @ Vdd =+7V Output IM3 @ Vdd = +8V Power Compression @ 6 GHz Power Compression @ 7 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Package Information Application Circuit List of Materials for Evaluation PCB EV1HMC7357LP5 [1] Evaluation PCB Pin Descriptions Gain & Power vs. Supply Current @ 7 GHz Gain & Power vs. Supply Voltage @ 7 GHz Power Compression @ 8 GHz Reverse Isolation vs. Temperature Output IP3 vs. Temperature, Pout/tone = +20 dBm Output IP3 vs. Supply Current, Pout/tone = +20 dBm P1dB vs. Supply Current Psat vs. Supply Current Psat vs. Temperature Psat vs. Supply Voltage