Datasheet HMC637ASCPZ-EP (Analog Devices) - 5

制造商Analog Devices
描述GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz
页数 / 页9 / 5 — Enhanced Product. HMC637ASCPZ-EP. PIN CONFIGURATION AND FUNCTION …
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Enhanced Product. HMC637ASCPZ-EP. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. ACG. NIC. 24 NIC. VGG2 2. 23 NIC. NIC 3. 22 GND. GND 4

Enhanced Product HMC637ASCPZ-EP PIN CONFIGURATION AND FUNCTION DESCRIPTIONS ACG NIC 24 NIC VGG2 2 23 NIC NIC 3 22 GND GND 4

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Enhanced Product HMC637ASCPZ-EP PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 1 2 C C C C C C NI NI ACG ACG NI NI NI NI 32 31 30 29 28 27 26 25 NIC 1 24 NIC VGG2 2 23 NIC NIC 3 22 GND HMC637ASCPZ-EP GND 4 21 RFOUT/V TOP VIEW DD RFIN 5 20 NIC (Not to Scale) NIC 6 19 NIC NIC 7 18 NIC NIC 8 17 NIC 9 10 11 12 13 14 15 16 C C C C 4 3 NI ND NI NI G GG1 NI V ACG ACG NOTES 1. NIC = NO INTERNAL CONNECTION. THESE PINS MAY BE CONNECTED TO
003
RF GROUND. PERFORMANCE IS NOT AFFECTED. 2. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO RF AND DC GROUND.
20371- Figure 3. Pin Configuration
Table 4. Pin Function Descriptions Pin No. Mnemonic Description1
1, 3, 6 to 11, 14, 17 to 20, 23 to 28, 31, 32 NIC No Internal Connection. These pins may be connected to RF ground. Performance is not affected. 2 VGG2 Gate Bias Voltage Control 2 for Amplifier. Apply 5 V to VGG2 for nominal operation. Attach a bypass capacitor per the application circuit shown the Application Information section of the HMC637ALP5E data sheet. 4, 12, 22 GND Ground. Connect Pin 4, Pin 12, and Pin 22 to RF and dc ground. 5 RFIN RF Input. This pad is dc-coupled and matched to 50 Ω. 13 VGG1 Gate Bias Voltage Control 1 for Amplifier. Attach a bypass capacitor per the application circuit shown in the Application Information section of the HMC637ALP5E data sheet. Follow the power-up and power-down sequences outlined in the Application Information section of the HMC637ALP5E data sheet. 15 ACG4 Low Frequency Termination 4. Attach a bypass capacitor per the application circuit shown in the Application Information section of the HMC637ALP5E data sheet. 16 ACG3 Low Frequency Termination 3. Attach a bypass capacitor per the application circuit shown in the Application Information section of the HMC637ALP5E data sheet. 21 RFOUT/VDD RF Output/Drain Bias Voltage for Amplifier. Connect the dc bias (VDD) network to provide IDD. See the application circuit shown in the Application Information section of the HMC637ALP5E data sheet. 29 ACG2 Low Frequency Termination 2. Attach a bypass capacitor per the application circuit shown in the Application Information section of the HMC637ALP5E data sheet. 30 ACG1 Low Frequency Termination 1. Attach a bypass capacitor per the application circuit shown in the Application Information section of the HMC637ALP5E data sheet. EPAD Exposed Pad. The exposed pad must be connected to RF and dc ground. 1 See the Interface Schematics section for pin interfaces. Rev. 0 | Page 5 of 9 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE POWER DERATING CURVES ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE