Datasheet HMC7229LS6 (Analog Devices) - 10
| 制造商 | Analog Devices |
| 描述 | GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz |
| 页数 / 页 | 15 / 10 — HMC7229LS6. Data Sheet. –40. +85°C. 40GHz. 39GHz. –50. +25°C. –40°C. … |
| 修订版 | E |
| 文件格式/大小 | PDF / 328 Kb |
| 文件语言 | 英语 |
HMC7229LS6. Data Sheet. –40. +85°C. 40GHz. 39GHz. –50. +25°C. –40°C. 38GHz. 37GHz. –60. S DI. R E W. EVER. –70. –80. –15. –12. FREQUENCY (GHz)
该数据表的模型线
文件文字版本
HMC7229LS6 Data Sheet –40 10 +85°C 9 40GHz ) 39GHz B –50 +25°C ) –40°C 38GHz (d (W 37GHz N N IO IO T T 8 A A L IP O –60 S IS S DI SE 7 R E W EVER O R –70 P 6 –80 5 37 38 39 40
028
–15 –12 –9 –6 –3 0 3 6 9 12
031 37- 37-
FREQUENCY (GHz)
133
INPUT POWER (dBm)
133 Figure 28. Reverse Isolation vs. Frequency for Various Temperatures Figure 31. Power Dissipation vs. Input Power
35 10 ) m 1 dB ( P1dB SAT 30 GAIN ) ), P PSAT V ( 0.1 m B d DET ( V B – 1d F P 0.01 RE +85°C ), V 25 +25°C dB –40°C ( IN 0.001 GA 20 0.0001 5.0 5.5 6.0
032 -029
–20 –10 0 10 20 30
37-
VDD (V) OUTPUT POWER (dBm)
13337 133 Figure 29. Gain, P1dB, and P Figure 32. Detector Voltage (V SAT vs. Supply Voltage (VDD) at 38.5 GHz REF − VDET) vs. Output Power for Various Temperatures at 38.5 GHz
35 ) m dB ( P1dB SAT 30 GAIN ), P PSAT m B d ( B 1d P ), 25 dB ( IN GA 20800 900 1000 1100 1200
-030
IDD (mA)
13337 Figure 30. Gain, P1dB, and PSAT vs. Supply Current (IDD) at 38.5 GHz Rev. E | Page 10 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down EVALUATION PRINTED CIRCUIT BOARD (PCB) TYPICAL APPLICATION CIRCUIT OUTLINE DIMENSIONS ORDERING GUIDE
028
–15 –12 –9 –6 –3 0 3 6 9 12
031 37- 37-
FREQUENCY (GHz)
133
INPUT POWER (dBm)
133 Figure 28. Reverse Isolation vs. Frequency for Various Temperatures Figure 31. Power Dissipation vs. Input Power
35 10 ) m 1 dB ( P1dB SAT 30 GAIN ) ), P PSAT V ( 0.1 m B d DET ( V B – 1d F P 0.01 RE +85°C ), V 25 +25°C dB –40°C ( IN 0.001 GA 20 0.0001 5.0 5.5 6.0
032 -029
–20 –10 0 10 20 30
37-
VDD (V) OUTPUT POWER (dBm)
13337 133 Figure 29. Gain, P1dB, and P Figure 32. Detector Voltage (V SAT vs. Supply Voltage (VDD) at 38.5 GHz REF − VDET) vs. Output Power for Various Temperatures at 38.5 GHz
35 ) m dB ( P1dB SAT 30 GAIN ), P PSAT m B d ( B 1d P ), 25 dB ( IN GA 20800 900 1000 1100 1200
-030
IDD (mA)
13337 Figure 30. Gain, P1dB, and PSAT vs. Supply Current (IDD) at 38.5 GHz Rev. E | Page 10 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCE During Power-Up During Power-Down EVALUATION PRINTED CIRCUIT BOARD (PCB) TYPICAL APPLICATION CIRCUIT OUTLINE DIMENSIONS ORDERING GUIDE