Datasheet HMC943APM5E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | >1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier |
| 页数 / 页 | 18 / 1 — >1.5 W (34 dBm), 24 GHz to 34 GHz,. GaAs, pHEMT, MMIC, Power … |
| 修订版 | B |
| 文件格式/大小 | PDF / 439 Kb |
| 文件语言 | 英语 |
>1.5 W (34 dBm), 24 GHz to 34 GHz,. GaAs, pHEMT, MMIC, Power Amplifier. Data Sheet. HMC943APM5E. FEATURES
该数据表的模型线
文件文字版本
>1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier Data Sheet HMC943APM5E FEATURES FUNCTIONAL BLOCK DIAGRAM High saturated output power (PSAT): 34 dBm HMC943APM5E High output IP3: 39 dBm ND C ND High gain: 23 dB G V G1 V D1 V D3 V D5 NI V D7 G 32 31 30 29 28 27 26 25 DC supply: 5.5 V at 1300 mA No external matching required GND 1 24 GND 32-lead, 5 mm × 5 mm LFCSP_CAV package NIC 2 23 NIC GND 3 22 GND APPLICATIONS RF 4 IN 21 RFOUT GND 5 2kΩ 2kΩ 20 GND Point to point radios NIC 6 19 VDET NIC 7 18 VREF Point to multipoint radios GND 8 17 GND Microwave radios, very small aperture terminals (VSATs), 9 PACKAGE and satellite communications (SATCOM) 10 11 12 13 14 15 16 BASE C
001
Military and space ND ND G V G2 V D2 V D4 V D6 NI V D8 G GND
16864- Figure 1.
GENERAL DESCRIPTION
The HMC943APM5E is a four stage, gallium arsenide (GaAs), of 39 dBm makes the HMC943APM5E ideal for microwave pseudomorphic high electron mobility transistor (pHEMT), radio applications. A power detector output is also available. monolithic microwave integrated circuit (MMIC), >1.5 W The HMC943APM5E amplifier input/outputs (I/Os) are power amplifier that operates between 24 GHz to 34 GHz. The internal y matched to 50 Ω. The device is packaged in a leadless, HMC943APM5E provides 23 dB of gain, 34 dBm of saturated 5 mm × 5 mm, surface-mount LFCSP_CAV package, and output power (PSAT), and 23% power added efficiency (PAE) requires no external matching components. from a 5.5 V supply. The high output third-order intercept (IP3)
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION POWER DETECTION EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE
001
Military and space ND ND G V G2 V D2 V D4 V D6 NI V D8 G GND
16864- Figure 1.
GENERAL DESCRIPTION
The HMC943APM5E is a four stage, gallium arsenide (GaAs), of 39 dBm makes the HMC943APM5E ideal for microwave pseudomorphic high electron mobility transistor (pHEMT), radio applications. A power detector output is also available. monolithic microwave integrated circuit (MMIC), >1.5 W The HMC943APM5E amplifier input/outputs (I/Os) are power amplifier that operates between 24 GHz to 34 GHz. The internal y matched to 50 Ω. The device is packaged in a leadless, HMC943APM5E provides 23 dB of gain, 34 dBm of saturated 5 mm × 5 mm, surface-mount LFCSP_CAV package, and output power (PSAT), and 23% power added efficiency (PAE) requires no external matching components. from a 5.5 V supply. The high output third-order intercept (IP3)
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION POWER DETECTION EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE